Datasheet > DGW50N65BTH

DGW50N65BTH

更新时间： 2024-04-09 18:59:30

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
11页	868K
描述
TO-247

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DGW50N65BTH 数据手册

RoHS

DGW50N65BTH

COMPLIANT

Electrical Characteristics of the DIODE

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

, at T_j= 25℃

Dynamic

Reverse Recovery Current

Reverse Recovery Charge

I_rr

Q_rr

trr

0.14

I_F=30A,V_R=400V

di/dt= -350A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Dynamic , at Tj= 125℃

Reverse Recovery Current

Erec

0.09

I_rr

Q_rr

trr

Reverse Recovery Charge

0.94

153

I_F=30A,V_R=400V

di/dt= -350A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Dynamic , at Tj= 150℃

Reverse Recovery Current

Erec

0.22

I_rr

Q_rr

trr

Reverse Recovery Charge

1.26

161

I_F=30A,V_R=400V

di/dt= -350A/μs,

Diode reverse recovery

time

Reverse Recovery Energy

Erec

0.26

Thermal Resistance

Paramete

Symbol

Max. Value

0.50

Unit

R_th(j-c)

R_th(j-a)

K/W

IGBT Thermal Resistance, Junction - Case

Diode Thermal Resistance, Junction - Case

Thermal Resistance, Junction - Ambient

1.05

S-M354D

www.21yangjie.com

Rev.1.1, 10-Aug-22

1 2 345 6 7...11

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