Datasheet > DG2517E

DG2517E

更新时间： 2023-12-06 20:11:35

品牌	Logo	应用领域
威世 - VISHAY		光电二极管
页数	文件大小	规格书
10页	183K
描述
2.5 Ω, High Bandwidth, Dual SPDT Analog Switch

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数据手册

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DG2517E 数据手册

DG2517E

Vishay Siliconix

www.vishay.com

TEST CIRCUITS

V+

ΔV

OUT

gen

OUT

NC or NO

COM

OUT

gen

= 1 nF

Off

Q = ΔV

= 0 - V+

GND

x C

OUT

IN depends on switch configuration: input polarity

determined by sense of switch.

Fig. 3 - Charge Injection

V+

10 nF

V+

NC or NO

COM

0 V, 2.0 V

Meter

COM

0 V, 2.0 V

COM

HP4192A

Impedance

Analyzer

or Equivalent

NC or NO

GND

f = 1 MHz

Analyzer

COM

Off Isolation = 20 log

NO NC

Fig. 5 - Channel Off/On Capacitance

Fig. 4 - Off-Isolation

V+

NC, NO, Sx

COM

5.5 V

GND

V+

NC, NO, Sx

COM

5.5 V

GND

Fig. 6 - Source / Drain Power Down Leakage

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?74518.

S17-0460-Rev. A, 03-Apr-17

Document Number: 74518

For technical questions, contact: analogswitchtechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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