DG2519E
Vishay Siliconix
www.vishay.com
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DESCRIPTION
FEATURES
• Single supply (1.8 V to 5.5 V)
• Low on-resistance - RON: 2.5
• Crosstalk and off isolation: -61 dB at 1 MHz
• MSOP-10 and DFN-10 package
The DG2519E is monolithic CMOS dual single-pole /
double-throw (SPDT) analog switches. It is specifically
designed for low-voltage, high bandwidth applications.
The DG2519E on-resistance, matching and flatness are
guaranteed over the entire analog voltage range. Wide
dynamic performance is achieved with typical at -61 dB for
both cross-talk and off-isolation at 1 MHz.
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
BENEFITS
• Reduced power consumption
• High accuracy
• Reduce board space
• Low-voltage logic compatible
• High bandwidth
Both SPDT’s operate with independent control logic,
conduct equally well in both directions and block signals up
to the power supply level when off. Break-before-make is
guaranteed.
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2519E are
ideally suited for audio and video switching with high
linearity.
APPLICATIONS
• Cellular phones
Built on Vishay Siliconix’s low voltage CMOS technology,
the DG2519E contain an epitaxial layer which prevents
latch-up
• Speaker headset switching
• Audio and video signal routing
• PCMCIA cards
• Low-voltage data acquisition
• ATE
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
LOGIC
EN
1
NC1 and NC2 NO1 and NO2
IN
NO1
GND
NO2
EN
COM1
NC1
1
2
3
4
5
10
9
0
1
0
1
ON
OFF
OFF
OFF
OFF
ON
1
0
OFF
OFF
V+
8
0
NC2
7
COM2
6
ORDERING INFORMATION
TEMP. RANGE
PACKAGE
MSOP-10
DFN-10
PART NUMBER
Top view
DG2519EDQ-T1-GE3
DG2519EDN-T1-GE4
-40 °C to +85 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LIMIT
-0.3 to +6
-0.3 to (V+ + 0.3)
50
UNIT
Reference V+ to GND
IN, COM, NC, NO a
V
Continuous current (any terminal)
Peak current (pulsed at 1 ms, 10 % duty cycle)
Storage temperature (D suffix)
mA
°C
200
-65 to +150
320
MSOP-10 c
DFN-10 d
Power dissipation (packages) b
mW
1191
ESD / HBM
ESD / CDM
Latch up
EIA / JESD22-A114-A
EIA / JESD22-C101-A
JESD78
7.5k
V
1.5k
300
mA
Notes
a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 4 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C
S17-0461-Rev. A, 03-Apr-17
Document Number: 78595
1
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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