Ordering number:EN2375
DFC15T
Diffused Junction Type Silicon Diode
1.5A Power Rectifier
Features
Package Dimensions
unit:mm
· High-speed switching use.
· Plastic molded structure.
1173
· Reverse recovery time trr=0.15µs max (B, C, E, G).
trr=0.3µs max (J, L, N, R).
[DFC15T]
· Peak reverse voltage:V =100 to 1500V
RM
· Average Rectified current I =1.5A
O
C:Cathode
A:Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Symbol
Conditions
DFC15TB
100
DFC15TC
DFC15TE
DFC15TG
Unit
V
200
→
400
→
600
V
A
RM
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
I
1.5
80
→
→
→
→
Ta=35˚C
50Hz sine wave, 1cycle
O
I
→
→
A
FSM
Tj
→
→
150
˚C
˚C
Tstg
→
→
–40 to +150
Parameter
Symbol
Conditions
DFC15TJ
DFC15TL
DFC15TN
DFC15TR
1500
Unit
V
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
V
800
→
1000
→
1200
→
RM
I
1.5
A
Ta=25˚C
O
I
→
→
→
50Hz sine wave, 1cycle
45
A
FSM
Tj
125
→
→
→
˚C
˚C
Tstg
–40 to +150
→
→
→
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
1.2
Forward Voltage
Reverse Current
V
I =1.5A (B, C, E, G)
F
I =1.5A (J, L, N, R)
F
V
V
F
1.5
–10
0.15
0.3
I
V
:At each V
µA
µs
µs
R
R
RM
Reverse Recovery Time
trr
I =2mA, V =15V (B,C, E, G)
F
R
I =2mA, V =15V (J, L, N, R)
F
R
Reverse Recovery Time Test Circuit
Unit (resistance:Ω, capacitance:F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT) 5168TA, TS No.2375-1/2