Datasheet > DFC15TG

DFC15TG

更新时间： 2024-01-22 22:56:55

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DFC15TG 数据手册

Ordering number:EN2375

DFC15T

Diffused Junction Type Silicon Diode

1.5A Power Rectifier

Features

Package Dimensions

unit:mm

· High-speed switching use.

· Plastic molded structure.

1173

· Reverse recovery time trr=0.15µs max (B, C, E, G).

trr=0.3µs max (J, L, N, R).

[DFC15T]

· Peak reverse voltage:V =100 to 1500V

· Average Rectified current I =1.5A

C:Cathode

A:Anode

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Peak Reverse Voltage

Symbol

Conditions

DFC15TB

100

DFC15TC

DFC15TE

DFC15TG

Unit

200

→

400

→

600

Average Recitified Current

Surge Forward Current

Junction Temperature

Storage Temperature

1.5

→

Ta=35˚C

50Hz sine wave, 1cycle

→

FSM

→

150

˚C

Tstg

→

–40 to +150

Parameter

Symbol

Conditions

DFC15TJ

DFC15TL

DFC15TN

DFC15TR

1500

Unit

Peak Reverse Voltage

Average Recitified Current

Surge Forward Current

Junction Temperature

Storage Temperature

800

→

1000

→

1200

→

1.5

Ta=25˚C

→

50Hz sine wave, 1cycle

FSM

125

→

˚C

Tstg

–40 to +150

→

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

1.2

Forward Voltage

Reverse Current

I =1.5A (B, C, E, G)

I =1.5A (J, L, N, R)

1.5

–10

0.15

0.3

:At each V

µA

µs

Reverse Recovery Time

trr

I =2mA, V =15V (B,C, E, G)

I =2mA, V =15V (J, L, N, R)

Reverse Recovery Time Test Circuit

Unit (resistance:Ω, capacitance:F)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT) 5168TA, TS No.2375-1/2

中文翻译

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