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DF8A6.8FK(TE85L,F) PDF预览

DF8A6.8FK(TE85L,F)

更新时间: 2024-01-20 20:13:22
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 155K
描述
Zener Diode

DF8A6.8FK(TE85L,F) 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.8二极管类型:ZENER DIODE
Base Number Matches:1

DF8A6.8FK(TE85L,F) 数据手册

 浏览型号DF8A6.8FK(TE85L,F)的Datasheet PDF文件第2页浏览型号DF8A6.8FK(TE85L,F)的Datasheet PDF文件第3页 
DF8A6.8FK  
TOSHIBA Diodes for Protecting Against ESD Epitaxial Planar Type  
DF8A6.8FK  
Diodes for Protecting Against ESD  
Unit in mm  
3.1±0.1  
2.3±0.1  
z Because seven devices are mounted on an ultra compact package, it is  
possible to allow reducing the number of the parts and the mounting cost.  
1
8
z Zener voltage correspond to E24 series.  
4
5
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Power dissipation  
Symbol  
P
Rating  
Unit  
200  
150  
mW  
°C  
0.7±0.1  
0~0.1  
Junction temperature  
T
j
1. CATHODE1  
2. CATHODE2  
3. CATHODE3  
4. CATHODE4  
5. CATHODE5  
6. CATHODE6  
7. CATHODE7  
8. ANODE  
Storage temperature range  
T
55~150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
US8  
JEDEC  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
JEITA  
TOSHIBA  
Weight: 0.0088 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Zener voltage  
Symbol  
Test Condition  
= 5mA  
Min  
Typ.  
Max  
Unit  
V
I
I
6.4  
6.8  
7.2  
25  
V
Ω
Z
Z
Z
Dynamic impedance  
Reverse current  
Z
= 5mA  
Z
I
V
V
= 5V  
0.5  
μA  
pF  
R
R
R
Total capacitance  
CT  
= 0V, f=1MHz  
45  
Guaranteed Level of ESD Immunity  
Test Condition  
ESD Immunity Level  
IEC61000-4-2  
(Contact discharge)  
± 30kV  
Judgment contents : No element destruction  
Marking  
Equivalent Circuit (Top View)  
8
1
7
6
5
8A  
68  
2
3 4  
1
2007-11-01  

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