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DDTC123JLP-7-F PDF预览

DDTC123JLP-7-F

更新时间： 2024-09-30 03:45:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
7页 268K
描述
PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR

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中文翻译

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DDTC123JLP-7-F 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DFN
包装说明：CHIP CARRIER, R-PBCC-N3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.67其他特性：HIGH RELIABILITYBUILT-IN BIAS RESISTANCE RATIO IS 21.36
外壳连接：COLLECTOR最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：180JESD-30 代码：R-PBCC-N3
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：0.25 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管元件材料：SILICON标称过渡频率 (fT)：250 MHz
Base Number Matches：1

DDTC123JLP-7-F 数据手册

 浏览型号DDTC123JLP-7-F的Datasheet PDF文件第2页浏览型号DDTC123JLP-7-F的Datasheet PDF文件第3页浏览型号DDTC123JLP-7-F的Datasheet PDF文件第4页浏览型号DDTC123JLP-7-F的Datasheet PDF文件第5页浏览型号DDTC123JLP-7-F的Datasheet PDF文件第6页浏览型号DDTC123JLP-7-F的Datasheet PDF文件第7页 
DDTCxxxxLP (R1≠R2 Series)  
PRE-BIASED SMALL SIGNAL SURFACE MOUNT 100mA NPN TRANSISTOR  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
2
2
1
Ultra-Small Leadless Surface Mount Package  
Ideally Suited for Automated Assembly Processes  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
3
1
E
B
3
C
R1  
R2  
Mechanical Data  
Fig. 1  
3 OUT  
•
•
Case: DFN1006-3  
Case Material: Molded Plastic, "Green" Molding  
Compound. UL Flammability Classification Rating 94V-0  
C
IN1  
C
B
B
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: Collector Dot (See Diagram)  
Terminals: Finish ⎯ NiPdAu annealed over Copper  
leadframe. Solderable per MIL-STD-202, Method 208  
IN  
OUT  
1
3
R1  
E
E
R2  
GND  
2
2
Equivalent Inverter Circuit  
GND  
•
•
•
Marking Information: See Page 6  
Ordering Information: See Page 6  
Weight: 0.001 grams (approximate)  
Schematic and Pin Configuration  
Fig. 2  
Component P/N  
DDTC123JLP  
DDTC143ZLP  
DDTC114YLP  
R1(NOM)  
2.2K  
4.7K  
R2(NOM)  
47K  
47K  
Figure  
2
2
2
10K  
47K  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
P/N  
Symbol  
Value  
Unit  
Supply Voltage  
50  
V
V
CC  
DDTC123JLP  
DDTC143ZLP  
DDTC114YLP  
DDTC123JLP  
DDTC143ZLP  
DDTC114YLP  
-5 to +12  
-5 to +30  
-5 to +40  
100  
100  
70  
Input Voltage  
V
V
IN  
O
Output Voltage  
mA  
I
Power Dissipation (Note 3)  
Power Deration above 25 °C  
Maximum Collector Current  
250  
2
mW  
mW/°C  
mA  
P
D
P
der  
C(max)  
100  
I
Thermal Characteristics  
Characteristic  
Symbol  
T , T  
Value  
Unit  
Junction Operating and Storage Temperature Range  
-55 to +150  
°C  
j
STG  
Thermal Resistance, Junction to Ambient Air (Note 3)  
(Equivalent to one heated junction of NPN)  
400  
°C/W  
R
θJA  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB, 1 inchx0.85inchx0.062inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on page 6 or our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS30755 Rev. 4 - 2  
1 of 7  
DDTCxxxxLP (R1≠R2 Series)  
© Diodes Incorporated  
www.diodes.com  
1234567

中文翻译

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