Datasheet > DB102S

DB102S

更新时间： 2024-01-02 21:00:48

品牌	Logo	应用领域
威伦 - WILLAS		二极管
页数	文件大小	规格书
2页	286K
描述
SINGLE-PHASE GLASS PASSIVATED SILICON SURFACE MOUNT BRIDGE RECTIFIER

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中文翻译

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技术参数
数据手册

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DB102S 技术参数

生命周期：	Obsolete	包装说明：	R-PDIP-W4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.57
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PDIP-W4
元件数量：	4	相数：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	DUAL
Base Number Matches：	1

DB102S 数据手册

DB101S

THRU

WILLAS

DB107S

SINGLE-PHASE GLASS PASSIVATED

SILICON SURFACE MOUNT BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere

FEATURES

* Surge overload rating - 50 amperes peak

* Ideal for printed circuit board

* Reliable low cost construction utilizing molded

* Glass passivated device

* Polarity symbols molded on body

* Mounting position: Any

DB-S

* Weight: 0. 378 grams

* RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

(

)

.310 7.9

(

.290 7.4

(

)

.255 6.5

(

.245 6.2

MECHANICAL DATA

Epoxy : Device has UL flammability classification 94V-0

.009

(.229)

* UL listed the recognized component directory, file #E195711

(

)

.013 .330

(

.003 .076

(

)

.042 1.1

(

.410 10.4

(

.038 1.0

(

)

.360 9.4

(

)

.060 1.524

(

)

.040 1.016

(8.51)

.335

(8.00)

.315

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

(

)

.134 3.4

(

.091 2.3

(

)

.205 5.2

(

.195 5.0

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (At TA = 25℃ unless otherwise noted)

RATINGS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

SYMBOL

V_RRM

V_RMS

V_DC

DB101S DB102S DB103S DB104S DB105S DB106S DB107S

UNITS

Volts

Amps

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

100

1000

Maximum Average Forward Output Current at TA = 40℃

Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on

rated load (JEDEC method)

I_O

IFSM

Amps

A²S

Rating for fusing （t<8.3ms）

I²t

6.6

Typical Thermal Resistance

R θ JA

R θ _JL

R θ _JC

T_J,T_STG

℃/W

(Note 2)

Operating and Storage Temperature Range

-55 to + 150

℃

ELECTRICAL CHARACTERISTICS (At TA = 25℃ unless otherwise noted)

CHARACTERISTICS

SYMBOL

V_F

DB101S DB102S DB103S DB104S DB105S DB106S DB107S

1.1

UNITS

Volts

Element at 1.0A DC Maximum Forward Voltage Drop per Bridge

@TA = 25℃

@TA = 125℃

uAmps

mAmps

Maximum Reverse Current at rated

DC Blocking Voltage per element

I_R

0.5

NOTE: 1.Suffix “-s” Surface Mount for Dip Bridge.

2.Units mounted on P.C.B.with 0.5x0.5” (13x13mm) copper pads.

中文翻译

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与DB102S相关器件

型号	品牌	获取价格	描述	数据表
DB102-S	LRC	获取价格	1.0A DIP & SMD BRIDGE RECTIFIERS
DB102S/DF01S	KINGTRONICS	获取价格	BRIDGE RECTIFIER
DB102S_12	LRC	获取价格	High Current Glass Passivated Molding Single-Phase Bridge Rectifier
DB102SDF01S	THINKISEMI	获取价格	1.0 Ampere Surface Mount Glass Passivated Bridge Rectifier
DB102S-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DB102SP-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DB102-SPT	CHENMKO	获取价格	SILICON SURFACE MOUNT BRIDGE RECTIFIER
DB102ST-G	COMCHIP	获取价格	SMD Glass Passivated Bridge Rectifiers
DB102TB	ETC	获取价格	BRIDGE RECT 1PHASE 100V 1A DB-M
DB102W	SURGE	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon, CASE 15, 4 PIN

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