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D2054UK PDF预览

D2054UK

更新时间: 2024-10-01 14:55:19
品牌 Logo 应用领域
TTELEC 放大器晶体管
页数 文件大小 规格书
2页 25K
描述
OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET

D2054UK 数据手册

 浏览型号D2054UK的Datasheet PDF文件第2页 
TetraFET  
D2054UK  
ROHS COMPLIANT METAL GATE RF SILICON FET  
MECHANICAL DATA  
GOLD METALLISED  
MULTI-PURPOSE SILICON  
DMOS RF FET  
C
D
B
8
7
1
E
2
R
A
3
6
F
5
4
Q
O
10W – 28V – 1GHz  
N
M
PUSH–PULL  
J
K
L
I
P
H
FEATURES  
G
• SIMPLIFIED AMPLIFIER DESIGN  
DBC4 Package  
• SUITABLE FOR BROAD BAND APPLICATIONS  
• VERY LOW C  
PIN 1 Source (Common) PIN 5 Source (Common)  
PIN 2 Drain 1  
PIN 3 Drain 2  
PIN 6 Gate 2  
PIN 7 Gate 1  
rss  
• SIMPLE BIAS CIRCUITS  
• LOW NOISE  
PIN 4 Source (Common) PIN 8 Source (Common)  
DIM  
A
B
C
D
E
F
mm  
6.47  
0.76  
45°  
Tol.  
0.08  
0.08  
5°  
Inches  
.255  
.030  
45°  
Tol.  
.003  
.003  
5°  
• HIGH GAIN – 13 dB MINIMUM  
0.76  
1.14  
2.67  
11.73  
8.43  
7.92  
0.20  
0.64  
0.30  
3.25  
2.11  
6.35SQ  
1.65  
0.13  
0.25  
0.08  
0.08  
0.08  
0.13  
0.08  
0.08  
0.02  
0.02  
0.02  
0.08  
0.08  
0.08  
0.51  
max  
0.07  
.030  
.045  
.105  
.462  
.332  
.312  
.008  
.025  
.012  
.128  
.083  
.250SQ  
.065  
.005  
0.010  
.003  
.003  
.003  
.005  
.003  
.003  
.001  
.001  
.001  
.003  
.003  
.003  
.020  
max  
.003  
G
H
I
J
K
L
M
N
O
P
Q
R
APPLICATIONS  
HF/VHF/UHF COMMUNICATIONS  
from 1MHz to 1 GHz  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C unless otherwise stated)  
case  
P
Power Dissipation  
29W  
65V  
D
BV  
BV  
Drain – Source Breakdown Voltage *  
Gate – Source Breakdown Voltage *  
Drain Current *  
DSS  
GSS  
±20V  
I
2A  
D(sat)  
T
T
Storage Temperature  
–65 to 150°C  
200°C  
stg  
Maximum Operating Junction Temperature  
j
* Per Side  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/00  

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