TetraFET
D2031UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
Dimensions in mm.
2.313
± 0.2
5.50 ± 0.15
0.3 R.
4 PL.
1.27 ± 0.05
2 PL.
7.5W – 28V – 1GHz
SINGLE ENDED
2 PL.
0.47
1.65
2 PL.
4
3
5
6
7
8
1.27
1.27
1.27
3.00 2.07
0.381
0.360
± 0.005
6.50 ±
0.15
2 PL. 2 PL.
2
1
0.10 R.
TYP.
0.47
2 PL.
FEATURES
0.80
4 PL.
0.10
TYP.
0.508
0.10
TYP.
• SIMPLIFIED AMPLIFIER DESIGN
4.90 ± 0.15
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
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F-0127 PACKAGE
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
PIN 5 – SOURCE
PIN 6 – GATE
• SIMPLE BIAS CIRCUITS
• LOW NOISE
PIN 7 – GATE
PIN 8 – SOURCE
• HIGH GAIN – 10 dB MINIMUM
Ceramic Material: Alumina.
Parts can also be supplied with AlN or BeO for
improved thermal resistance.
Contact Semelab for details.
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
P
Power Dissipation
17.5W
65V
D
BV
BV
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
DSS
GSS
±20V
I
3A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
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Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Prelim. 2/99