Datasheet > D1220

D1220

更新时间： 2024-01-31 19:14:05

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	39K
描述
Silicon NPN Epitaxial Transistor

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中文翻译

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数据手册

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D1220 数据手册

SMD Type

Transistors

Silicon NPN Epitaxial Transistor

2SD1220

TO-252

Unit: mm

6.50^+0.15

-0.15

2.30^+0.1

-0.1

5.30^+0.2

0.50^+0.8

-0.7

-0.2

Features

Power Amplifier Applications

0.127

0.80^+0.1

max

-0.1

0.60^+0.1

2.3

4.60^+0.15

-0.1

1 Base

-0.15

2 Collector

3 Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

150

1.5

Base current

I^B

Collector power dissipation Ta = 25

Tc = 25

Junction temperature

Storage temperature range

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cut-off current

Emitter cut-off current

Symbol

I^CBO

Testconditons

Min

Typ

Max

1.0

Unit

ìA

VCB = 150 V, IE = 0

I^EBO

VEB = 6 V, IC = 0

1.0

Collector-emitter breakdown voltage

DC current gain

V ^{(BR) CEO}

h^FE

V^{CE (sat)}

V^BE

IC = 10 mA, IB = 0

150

VCE = 5 V, IC = 200 mA

IC = 500 mA, IB = 50 mA

VCE = 5 V, IC = 5 mA

VCE = 5 V, IC = 200 mA

320

1.5

0.8

Collector-emitter saturation voltage

Base-emitter voltage

0.5

Transition frequency

f^T

100

MHz

Collector output capacitance

C^ob

VCB = 10 V, IE = 0, f = 1 MHz

hFE Classification

D1220

Marking

Rank

hFE

60 to 120

100 to 200

160 to 320

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