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CYII4SE6600AB-QDC PDF预览

CYII4SE6600AB-QDC

更新时间: 2024-01-27 00:59:26
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟传感器换能器
页数 文件大小 规格书
34页 1337K
描述
CMOS Sensor, 2210 Horiz pixels, 3002 Vert pixels, 5fps, 0.50-2.80V, Square, Surface Mount, CERAMIC, LLC-68

CYII4SE6600AB-QDC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CERAMIC, LLC-68Reach Compliance Code:not_compliant
风险等级:5.84其他特性:ELECTRONIC ROLLING SHUTTER
阵列类型:FULL FRAME主体宽度:24.13 mm
主体高度:3.04 mm主体长度或直径:24.13 mm
动态范围:59 dB帧速率:5 fps
水平像素:2210外壳:CERAMIC
主时钟:40 MHz安装特点:SURFACE MOUNT
最大工作电流:80 mA最高工作温度:65 °C
最低工作温度:-30 °C光学格式:1 inch
输出接口类型:3-WIRE INTERFACE输出范围:0.50-2.80V
输出类型:DIGITAL VOLTAGE封装形状/形式:SQUARE
像素大小:3.5X3.5 µm电源:2.5 V
灵敏度(V / lx.s):4.83 V/lx.s传感器/换能器类型:IMAGE SENSOR,CMOS
子类别:CCD Image Sensors最大供电电压:3.3 V
最小供电电压:2.5 V表面贴装:YES
端接类型:SOLDER垂直像素:3002
Base Number Matches:1

CYII4SE6600AB-QDC 数据手册

 浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第2页浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第3页浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第4页浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第6页浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第7页浏览型号CYII4SE6600AB-QDC的Datasheet PDF文件第8页 
IBIS4-6600 CYII4SM6600AB  
Electrical Specifications  
Absolute Maximum Ratings  
Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Stresses beyond those listed  
under Table 2 may cause permanent damage to the device. These are stress ratings only and the functional operation of the device  
at these or any other conditions beyond those indicated in the operational sections are not implied.  
Table 2. Absolute Maximum Ratings  
Symbol  
Parameter  
Value  
Unit  
[1]  
DC Supply Voltage  
–0.5 to 3.3  
V
VDD  
VIN  
VOUT  
IIO  
DC Input Voltage  
–0.5 to (VDD + 0.5)  
–0.5 to (VDD + 0.5)  
± 50  
V
V
DC Output Voltage  
DC Current Drain Per Pin; Any Single Input or Output  
Lead Temperature (5 seconds soldering)  
Storage Temperature  
mA  
°C  
°C  
TL  
350  
TST  
H
–30 to +85  
85% at 85 °C  
2000  
Humidity (Relative)  
ESD  
ESD Susceptibility  
V
Recommended Operating Conditions  
Symbol Parameter  
VDD  
TA  
Min  
Typ  
2.5  
24  
Max  
Unit  
V
DC Supply Voltage  
2.5  
3.3  
Commercial Operating Temperature  
–30  
+65  
°C  
All parameters are characterized for DC conditions after thermal equilibrium is established. Unused inputs must always be tied to an  
appropriate logic level, for example, VDD or GND.  
This device contains circuitry to protect the inputs against damage caused by high static voltages or electric fields. However, you must  
take normal precautions to avoid applying voltages higher than the maximum rated voltages to this high impedance circuit.  
DC Electrical Conditions  
Symbol  
Characteristic  
Input High Voltage  
Input Low Voltage  
Input Leakage Current  
Output High Voltage  
Output Low Voltage  
Operating Current  
Condition  
Min  
VDD-0.5  
–0.6  
Max  
Unit  
V
VIH  
VIL  
IIN  
0.6  
V
VIN = VDD or GND  
–10  
+10  
µA  
V
VOH  
VOL  
IDD  
VDD=min; IOH= –100 mA  
VDD=min; IOH= 100 mA  
System clock <= 40 MHz  
VDD-0.5  
0.5  
80  
V
70  
mA  
Note  
1.  
V
= V  
= V  
(V  
is supply to digital circuit, V  
to analog circuit).  
DDA  
DD  
DDD  
DDA  
DDD  
Document Number: 001-02366 Rev. *F  
Page 5 of 34  
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