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CSP10L45S-A PDF预览

CSP10L45S-A

更新时间: 2024-01-14 23:27:44
品牌 Logo 应用领域
竹懋 - CITC /
页数 文件大小 规格书
3页 475K
描述
Super Low Barrier High Voltage Power Rectifier

CSP10L45S-A 数据手册

 浏览型号CSP10L45S-A的Datasheet PDF文件第2页浏览型号CSP10L45S-A的Datasheet PDF文件第3页 
CSP10L45S-A  
Super Low Barrier High Voltage Power Rectifier  
Chip Integration Technology Corporation  
Main Product Characteristics  
Outline  
10A  
IF(AV)  
VRRM  
TJ  
45V  
150OC  
TO-277  
0.264 (6.70)  
0.248 (6.30)  
PIN 1  
PIN 3  
PIN 2  
0.47V  
V(Typ)  
1
3
Features  
0.077 (1.96)  
0.069 (1.76)  
0.073 (1.85)  
2
0.069 (1.75)  
Low forward voltage drop.  
Excellent high temperature stability.  
Fast switching capability.  
Suffix "G" indicates Halogen-free part, ex.CSP10L45SG-A.  
Lead-free parts meet environmental standards of  
MIL-STD-19500 /228  
0.028 (0.71)  
0.016 (0.41)  
0.216 (5.48)  
0.208 (5.28)  
0.028 (0.71)  
0.016 (0.41)  
0.037 (0.95)  
0.033 (0.85)  
0.124 (3.15)  
0.112 (2.85)  
Mechanical data  
0.037 (0.95)  
0.033 (0.85)  
Epoxy : UL94-V0 rated flame retardant.  
Case : Molded plastic, TO-277.  
Lead : Solder plated, solderable per MIL-STD-750,  
Method 2026.  
Polarity: Indicated by cathode band.  
Mounting Position : Any.  
0.145 (3.69)  
0.133 (3.39)  
0.069 (1.74)  
0.057 (1.44)  
0.014 (0.35)  
0.010 (0.25)  
0.049 (1.25)  
0.037 (0.95)  
Weight : Approximated 0.093 grams.  
Dimensions in inches and (millimeters)  
Maximum ratings and electrical characteristics  
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Parameter  
Marking code  
Conditions  
Symbol  
CSP10L45S-A  
CSP10L45S  
UNIT  
V
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VRM  
IO  
45  
Forward rectified current  
10  
A
A
8.3ms single half sine-wave superimposed on  
rate load (JEDEC method)  
Forward surge current  
IFSM  
250  
OC/W  
OC  
RθJC  
Thermal resistance  
Junction to case  
4
Operating and Storage temperature  
TJ, TSTG  
-55 ~ +150  
Parameter  
Conditions  
IR = 0.5mA  
IF = 10A, TJ = 25OC  
IF = 10A, TJ = 125OC  
VR = VRRM, TJ = 25OC  
VR = VRRM, TJ = 125OC  
Symbol  
V(BR)R  
MIN.  
45  
TYP.  
470  
MAX.  
UNIT  
V
Reverse breakdown voltage  
530  
490  
0.4  
50  
Forward voltage drop  
VF  
IR  
mV  
mA  
Reverse current  
Note : 1.FR-4 PCB, 2oz.Copper.  
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.  
Document ID : DS-12KCH  
Revised Date : 2015/08/11  
Revision : C4  
1

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