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CSD97374Q4M_15 PDF预览

CSD97374Q4M_15

更新时间: 2024-01-23 06:49:09
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德州仪器 - TI /
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18页 931K
描述
Synchronous Buck NexFET Power Stage

CSD97374Q4M_15 数据手册

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CSD97374Q4M  
www.ti.com  
SLPS382C JANUARY 2013REVISED JULY 2013  
Synchronous Buck NexFET™ Power Stage  
1
FEATURES  
APPLICATIONS  
23  
Over 92% System Efficiency at 15A  
Max Rated Continuous Current 25A, Peak 60A  
High Frequency Operation (up to 2 MHz)  
High Density - SON 3.5x4.5-mm Footprint  
Ultra Low Inductance Package  
System Optimized PCB Footprint  
Ultra Low Quiescent (ULQ) Current Mode  
3.3V and 5V PWM Signal Compatible  
Diode Emulation Mode with FCCM  
Input Voltages up to 24V  
Ultrabook/Notebook DC/DC Converters  
Multiphase Vcore and DDR Solutions  
Point-of-Load Synchronous Buck in  
Networking, Telecom, and Computing Systems  
ORDERING INFORMATION  
Device  
Package  
Media  
Qty  
Ship  
SON 3.5 × 4.5-mm  
Plastic Package  
13-Inch  
Reel  
Tape and  
Reel  
CSD97374Q4M  
2500  
Three-State PWM Input  
Integrated Bootsrap Diode  
Shoot Through Protection  
RoHS Compliant – Lead Free Terminal Plating  
Halogen Free  
DESCRIPTION  
The CSD97374Q4M NexFET™ Power Stage is a highly optimized design for use in a high power, high density  
Synchronous Buck converter. This product integrates the driver IC and NexFET technology to complete the  
power stage switching function. The driver IC has a built-in selectable diode emulation function that enables  
DCM operation to improve light load efficiency. In addition, the driver IC supports ULQ mode that enables  
Connected Standby for Windows™ 8 . With the PWM input in tri-state, quiescent current is reduced to 130 µA,  
with immediate response. When SKIP# is held at tri-state, the current is reduced to 8 µA (typically 20 µs is  
required to resume switching). This combination produces a high current, high efficiency, and high speed  
switching device in a small 3.5 × 4.5-mm outline package. In addition, the PCB footprint has been optimized to  
help reduce design time and simplify the completion of the overall system design.  
100  
90  
80  
70  
60  
50  
40  
12  
10  
8
VGS = 5V  
VIN = 12V  
VOUT = 1.8V  
LOUT = .29µH  
fSW = 500kHz  
TA = 25ºC  
6
4
2
0
0
5
10  
15  
20  
25  
Output Current (A)  
G001  
Figure 1. Application Diagram  
Figure 2. Efficiency and Power Loss  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NexFET is a trademark of Texas Instruments.  
2
3
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2013, Texas Instruments Incorporated  

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