Silicon N-Channel Power MOSFET
CS40N045 A3
R
○
General Description:
VDSS
45
40
V
CS40N045 A3, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-251, which accords with the RoHS standard.
Features:
ID
A
W
PD
44.6
8.2
RDS(ON)Typ
mΩ
TO-251
Fast Switching
Low ON Resistance(Rdson≤10mΩ)
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
E-cigarette,Electric Tool
Absolute(Tj= 25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
45
V
A
Continuous Drain Current TC = 25 °C
Continuous Drain Current TC = 100 °C
Pulsed Drain Current TC = 25 °C
Gate-to-Source Voltage
40
ID
31
160
A
a1
A
IDM
VGS
V
±20
a2
Avalanche Energy
88.2
mJ
W
EAS
Power Dissipation TC = 25 °C
Derating Factor above 25°C
44.6
PD
0.357
W/℃
℃
Operating Junction and Storage Temperature Range
TJ,Tstg
150,–55 to 150
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2022V01