Datasheet > CS2837AND

CS2837AND

更新时间： 2024-11-20 17:01:59

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华润微 - CRMICRO		/
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10页	677K
描述
TO-3P

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CS2837AND 数据手册

Silicon N-Channel Power MOSFET

○

CS2837 AND

General Description：

V_DSS

500

CS2837 AND, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-3P(N), which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

230

0.18

Ω

l Fast Switching

l Low ON Resistance(Rdson≤0.26Ω)

l Low Gate Charge (Typical Data:96nC)

l Low Reverse transfer capacitances(Typical:44pF)

l 100% Single Pulse avalanche energy Test

Applications：

Automotive、DC Motor Control and Class D Amplifier.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

500

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

1500

E_AS

250

E_AR

7.1

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

230

1.84

P_D

Derating Factor above 25°C

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

V_ESD(G-S)

T_J，T_stg

T_L

6000

150，–55 to 150

300

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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