Silicon N-Channel Power MOSFET
R
○
CS2837 AND
General Description:
VDSS
500
V
A
CS2837 AND, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard.
Features:
ID
20
PD(TC=25℃)
RDS(ON)Typ
230
0.18
W
Ω
l Fast Switching
l Low ON Resistance(Rdson≤0.26Ω)
l Low Gate Charge (Typical Data:96nC)
l Low Reverse transfer capacitances(Typical:44pF)
l 100% Single Pulse avalanche energy Test
Applications:
Automotive、DC Motor Control and Class D Amplifier.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
500
V
A
Continuous Drain Current
20
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
13
A
a1
80
A
IDM
Gate-to-Source Voltage
VGS
V
±30
a2
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
1500
mJ
mJ
A
EAS
a1
250
EAR
a1
7.1
IAR
a3
Peak Diode Recovery dv/dt
Power Dissipation
5.0
V/ns
W
dv/dt
230
1.84
PD
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W/℃
V
VESD(G-S)
TJ,Tstg
TL
6000
150,–55 to 150
300
℃
℃
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.
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2015V01