CS1615/16
3.2 Thermal Resistance
Symbol
Parameter
SOIC
TSSOP
Unit
Junction-to-Ambient Thermal Impedance
2 Layer PCB
4 Layer PCB
119
105
138
103
°C/W
°C/W
JA
JC
Junction-to-Case Thermal Impedance
2 Layer PCB
4 Layer PCB
50
44
44
28
°C/W
°C/W
3.3 Absolute Maximum Ratings
Characteristics conditions:
All voltages are measured with respect to GND.
Pin
Symbol
Parameter
Value
Unit
14
VDD
IC Supply Voltage
18.5
V
2,8,9,
10,11,16
Analog Input Maximum Voltage
Analog Input Maximum Current
-0.5 to (VDD+0.5)
5
V
2,8,9,
10,11,16
mA
13
13
5
VGD
IGD
Gate Drive Output Voltage
Gate Drive Output Current
-0.3 to (VDD+0.3)
-1.0 / +0.5
1.1
V
A
ISOURCE Current into Pin
A
3
ICLAMP Clamp Output Current
15
mA
mW
°C
°C
-
PD
TJ
Total Power Dissipation
400
-
Junction Temperature Operating Range
Storage Temperature Range
(Note 8)
-40 to +125
-65 to +150
-
TStg
Electrostatic Discharge Capability
Human Body Model
Charged Device Model
2000
500
V
V
All Pins
ESD
Note:
8. Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at
the rate of 50mW /°C for variation over temperature.
WARNING:
Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
6
DS961F1