Silicon N-Channel Power MOSFET
CS10N045 AE-G
R
○
General Description:
VDSS
45
10
V
A
CS10N045 AE-G, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is SOP8,
which accords with the Halogen Free standard.
ID
PD(Ta=25℃)
RDS(ON) Typ@Vgs=10V
RDS(ON) Typ@Vgs=4.5V
2.9
10
W
mΩ
mΩ
12.5
Features:
Fast Switching
Low ON Resistance
Low Gate Charge
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Halogen Free
Applications:
Power switch circuit of adaptor and charger.
Absolute(TA= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
45
V
A
Continuous Drain Current
10
ID
Continuous Drain Current TA = 100 °C
Pulsed Drain Current
7.6
A
a1
40
A
IDM
Gate-to-Source Voltage
VGS
V
±20
a2
Single Pulse Avalanche Energy
Power Dissipation
84
2.9
mJ
W
EAS
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
0.0232
W/℃
℃
TJ,Tstg
150,–55 to 150
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2020V01