Datasheet > CS10N06BE-G

CS10N06BE-G

更新时间： 2024-03-03 10:09:48

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	680K
描述
SOP-8

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CS10N06BE-G 数据手册

Silicon N-Channel Power MOSFET

CS10N06 BE-G

○

General Description：

V_DSS

CS10N06 BE-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. This device is

suitable for use as a load switch and PWM applications.. The

package form is SOP-8, which accords with the RoHS standard.

Features：

I_D

3.1

12.5

R_DS(ON)Typ

mΩ

 Fast Switching

 Low ON Resistance(Rdson≤16 mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger;

LED backlight driver.

Absolute（TA= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current

Continuous Drain Current T_A= 100 °C

Pulsed Drain Current

I_D

6.3

I_DM

Gate-to-Source Voltage

V_GS

±20

Avalanche Energy

121

3.1

E_AS

Power Dissipation

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

0.025

W/℃

℃

T_J，T_stg

150，–55 to 150

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