Datasheet > CS008L

CS008L

更新时间： 2023-12-06 20:06:26

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	2915K
描述
SOT-23-3LK

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中文翻译

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数据手册

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CS008L 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23-3L Plastic-Encapsulate T

hyristors

Sensitive Gate SCRs

CS008L

MAIN CHARACTERISTICS

0.5A

I_T(

)

V_DRM/V_RRM

600V

SOT-23-3LK

I_GT

200 A

1.CATHODE

2.ANODE

3.GATE

FEATURES



PNPN 4-layer Structure SCRs

Mesa Glass Passivated Technology

Multi Layers Metal Electrodes

Sensitive gate trigger

APPLICATIONS

MARKING



Pulse Igniter



Leakage Protector

Logic Circuit Driver

ABSOLUTE RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Unit

Test condition

Value

Repetitive peak off-

state voltage

V_DRM/ V_RRM

T_j=25℃

SOT-23-3LK(T_C≤60℃)

600

I_T(AV)

Average on-state current

RMS on-state current

0.5

0.8

I_T(RMS)

SOT-23-3LK(T_C≤60℃)，Fig. 1,2

Non repetitive surge

peak on-state current

Full sine wave ，T_j(init)=25℃,

I_TSM

I²t

tp=20ms; Fig. 3,5

I²t value

tp=10ms

0.32

A²s

A/μs

Critical rate of rise of I_G=2*I_GT, tr≤10ns, F=120H_Z,

dI_T/dt

T_j=110℃

on-state current

I_GM

Peak gate current

Average gate power

Storage temperature

0.2

0.1

tp=20µs, T_j=110℃

T_j=110℃

P_G(AV)

T_STG

-40~+150

℃

Operating junction

temperature

T_j

-40~+110

www.jscj-elec.com

Rev. - 1.0

12 3 4

中文翻译

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