Datasheet > CR2N65A4K

CR2N65A4K

更新时间： 2024-04-09 19:03:21

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	967K
描述
TO-252

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CR2N65A4K 数据手册

CR2N65 A4K

Electrical Characteristics（T_J= 25℃ unless otherwise specified）：

OFF Characteristics

Rating

Typ.

Unit

Parameter

Test Conditions

Symbol

Min.

650

Max.

V_GS=0V, I_D=250µA

Drain to Source Breakdown Voltage

Bvdss Temperature Coefficient

V_DSS

ID=250uA,Reference25℃

V/℃

µA

0.67

ΔBV_DSS/ΔT_J

V_DS=650V, V_GS= 0V,

T_J= 25℃

V_DS=520V, V_GS= 0V,

T_J= 125℃

Drain to Source Leakage Current

I_DSS

µA

100

-100

V_GS=+30V

V_GS=-30V

Gate to Source Forward Leakage

Gate to Source Reverse Leakage

I_GSS(F)

I_GSS(R)

ON Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ. Max.

V_GS=10V,I_D=1A

Drain-to-Source On-Resistance

Gate Threshold Voltage

R_DS(ON)

V_GS(TH)

5.6

6.5

4.0

Ω

V_DS= V_GS, I_D= 250µA

2.0

Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics

Rating

Typ.

Parameter

Test Conditions

Symbol

Units

Min.

Max.

V_DS=15V, I_D=2A

Forward Transconductance

Input Capacitance

g_fs

1.7

C_iss

C_oss

C_rss

256

V_GS= 0V V_DS= 25V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

2.6

Resistive Switching Characteristics

Rating

Parameter

Test Conditions

Symbol

Units

Min.

Typ.

Max.

Turn-on Delay Time

Rise Time

t_d(ON)

t_d(OFF)

t_f

10.4

7.4

I_D=2A V_DD= 325V

R_G=10Ω

Turn-Off Delay Time

Fall Time

11.8

10.6

1.4

Total Gate Charge

Gate to Source Charge

Gate to Drain (“Miller”)Charge

Q_g

I_D=2A V_DD=520V

V_GS= 10V

Q_gs

Q_gd

6.9

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