5秒后页面跳转
CP591V-2N2907A PDF预览

CP591V-2N2907A

更新时间: 2024-09-30 14:55:15
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
9页 699K
描述
60V,600mA,400mW Bare die,19.290 X 19.290 mils,Transistor-Small Signal (<=1A)

CP591V-2N2907A 数据手册

 浏览型号CP591V-2N2907A的Datasheet PDF文件第2页浏览型号CP591V-2N2907A的Datasheet PDF文件第3页浏览型号CP591V-2N2907A的Datasheet PDF文件第4页浏览型号CP591V-2N2907A的Datasheet PDF文件第5页浏览型号CP591V-2N2907A的Datasheet PDF文件第6页浏览型号CP591V-2N2907A的Datasheet PDF文件第7页 
PROCESS CP591V  
Small Signal Transistor  
PNP - Amp/Switch Transistor Chip  
PROCESS DETAILS  
Process  
EPITAXIAL PLANAR  
19 x 19 MILS  
7.1 MILS  
Die Size  
Die Thickness  
Base Bonding Pad Area  
Emitter Bonding Pad Area  
Top Side Metalization  
Back Side Metalization  
3.5 x 4.3 MILS  
3.5 x 4.5 MILS  
Al - 30,000Å  
Au - 18,000Å  
GEOMETRY  
GROSS DIE PER 4 INCH WAFER  
30,475  
PRINCIPAL DEVICE TYPES  
2N2905A  
2N2907A  
CMPT2907A  
CMST2907A  
CXT2907A  
CZT2907A  
PN2907A  
BACKSIDE COLLECTOR  
R1  
R3 (22-March 2010)  
www.centralsemi.com