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CNY17F3SR2M PDF预览

CNY17F3SR2M

更新时间: 2023-09-03 20:27:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管光电晶体管
页数 文件大小 规格书
12页 367K
描述
6 引脚 DIP 高 BVCEO光电晶体管输出光电耦合器

CNY17F3SR2M 数据手册

 浏览型号CNY17F3SR2M的Datasheet PDF文件第2页浏览型号CNY17F3SR2M的Datasheet PDF文件第3页浏览型号CNY17F3SR2M的Datasheet PDF文件第4页浏览型号CNY17F3SR2M的Datasheet PDF文件第5页浏览型号CNY17F3SR2M的Datasheet PDF文件第6页浏览型号CNY17F3SR2M的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
6-Pin DIP High BVCEO  
Phototransistor  
Optocouplers  
6
1
PDIP6  
CASE 646BY  
CNY17 Series, MOC8106M  
Description  
The CNY17XM, CNY17FXM, and MOC8106M devices consist of  
a gallium arsenide infrared emitting diode coupled with an NPN  
phototransistor in a dual inline package.  
6
1
PDIP6  
CASE 646BX  
Features  
High BV  
: 70 V Minimum  
CEO  
(CNY17XM, CNY17FXM, MOC8106M)  
Closely Matched Current Transfer Ratio (CTR) Minimizes  
UnittoUnit Variation  
Current Transfer Ratio In Select Groups  
6
Very Low Coupled Capacitance Along With  
No ChiptoPin 6 Base Connection for Minimum Noise  
Susceptibility (CNY17FXM, MOC8106M)  
1
PDIP6  
CASE 646BZ  
Safety and Regulatory Approvals:  
UL1577, 4,170 VAC  
for 1 Minute  
RMS  
MARKING DIAGRAM  
DINEN/IEC6074755, 850 V Peak Working  
Insulation Voltage  
Applications  
1
ON  
Power Supply Regulators  
Digital Logic Inputs  
Microprocessor Inputs  
Appliance Sensor Systems  
Industrial Controls  
2
6
CNY171  
V
X
YY  
Q
3
5
4
1.  
2.  
3.  
ON  
= onsemi Logo  
CNY17 = Device Number  
V
= DIN EN/IEC6074755 Option  
(only appears on component ordered  
with this option)  
4
X
= OneDigit Year Code  
5.  
6.  
YY  
Q
= Digit Work Week  
= Assembly Package Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of  
this data sheet.  
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2022 Rev. 3  
CNY17F4M/D  

CNY17F3SR2M 替代型号

型号 品牌 替代类型 描述 数据表
CNY17F3SR2VM ONSEMI

类似代替

6 引脚 DIP 高 BVCEO光电晶体管输出光电耦合器
CNY17F3SR2M FAIRCHILD

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CNY17F3SR2VM FAIRCHILD

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Phototransistor Optocouplers

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