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CMT14N50N3P PDF预览

CMT14N50N3P

更新时间: 2024-01-08 00:59:46
品牌 Logo 应用领域
虹冠电子 - CHAMP 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 253K
描述
POWER FIELD EFFECT TRANSISTOR

CMT14N50N3P 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

CMT14N50N3P 数据手册

 浏览型号CMT14N50N3P的Datasheet PDF文件第2页浏览型号CMT14N50N3P的Datasheet PDF文件第3页浏览型号CMT14N50N3P的Datasheet PDF文件第4页浏览型号CMT14N50N3P的Datasheet PDF文件第5页浏览型号CMT14N50N3P的Datasheet PDF文件第6页浏览型号CMT14N50N3P的Datasheet PDF文件第7页 
CMT14N50  
POWER FIELD EFFECT TRANSISTOR  
GENERAL DESCRIPTION  
FEATURES  
This high voltage MOSFET uses an advanced termination ꢀ  
scheme to provide enhanced voltage-blocking capability ꢀ  
without degrading performance over time. In addition, this ꢀ  
advanced MOSFET is designed to withstand high energy in  
Robust High Voltage Termination  
Avalanche Energy Specified  
Source-to-Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
avalanche and commutation modes. The new energy  
Diode is Characterized for Use in Bridge Circuits  
IDSS and VDS(on) Specified at Elevated Temperature  
efficient design also offers a drain-to-source diode with a ꢀ  
fast recovery time. Designed for high voltage, high speed  
switching applications in power supplies, converters and  
PWM motor controls, these devices are particularly well  
suited for bridge circuits where diode speed and  
commutating safe operating areas are critical and offer  
additional and safety margin against unexpected voltage  
transients.  
PIN CONFIGURATION  
SYMBOL  
TO-3P  
D
Top View  
G
S
N-Channel MOSFET  
2
3
1
ABSOLUTE MAXIMUM RATINGS  
Rating  
Drain to Current Continuous  
Symbol  
ID  
Value  
14  
Unit  
A
Pulsed  
IDM  
56  
Gate-to-Source Voltage Continue  
Non-repetitive  
Total Power Dissipation  
VGS  
VGSM  
PD  
±20  
±40  
190  
V
V
W
Derate above 25℃  
1.5  
-55 to 150  
588  
W/℃  
Operating and Storage Temperature Range  
Single Pulse Drain-to-Source Avalanche Energy TJ = 25℃  
(VDD = 100V, VGS = 10V, IL = 14A, L = 6mH, RG = 25)  
Thermal Resistance Junction to Case  
Junction to Ambient  
TJ, TSTG  
EAS  
mJ  
θJC  
θJA  
TL  
0.65  
40  
260  
/W  
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds  
2002/12/18 Preliminary  
Champion Microelectronic Corporation  
Page 1  

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