CM7319S8
Dual N and P Channel 30V (D-S) Power MOSFET
Description
Applications
CM7319S8 is the Dual N and P-Channel enhancement
mode power field effect transistors with high cell density,
trench technology. This high density process and design
have been optimized switching performance and especial-
ly tailored to minimize on-state resistance.
Cellular Handsets and Accessories
Personal Digital Assistants
Portable Instrumentation
Load switch
Marking Information
Features
VDS: 30V / –30V
Marking Code = 7319S8
Date Code = XXXX
ID: 6.5A / –4.6A
7319S8
N-Channel RDSON (@VGS=10V) : < 29mΩ
N-Channel RDSON (@VGS=4.5V) : < 40mΩ
P-Channel RDSON (@VGS=-10V) : < 59mΩ
P-Channel RDSON (@VGS=-4.5V) : < 75mΩ
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Ordering Information
Equivalent Circuit and Pin Configuration
Part Number
Packaging
4000/Tape & Reel
Reel Size
CM7319S8
13 inch
D2
D2
D1
D1
G2
S2
G1
Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)
Maximum
N-Channel P-Channel
Parameter
Symbol
Unit
Drain-source Voltage
Gate-source Voltage
VDS
VGS
30
±20
6.5
5.3
26
-30
±20
-4.6
-3.7
-18.4
2
V
V
TA=25°C
TA=70°C
A
Continuous Drain Current
Pulsed Drain Current(1)
ID
A
IDM
PD
A
Total Power Dissipation @ TA=25°C (2)
Thermal Resistance Junction-to-Ambient (2)
Junction and Storage Temperature Range
2
W
RθJA
62.5
62.5
°C/W
°C
TJ,TSTG
-55 to +150 -55 to +150
Jul. 2021, Rev. 1.1
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