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CLC5509CM PDF预览

CLC5509CM

更新时间: 2024-01-06 16:33:36
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器
页数 文件大小 规格书
11页 448K
描述
Ultra-Low Noise Preamplifier

CLC5509CM 技术参数

生命周期:Obsolete包装说明:SOP,
Reach Compliance Code:unknown风险等级:5.84
标称带宽:33 kHz商用集成电路类型:AUDIO PREAMPLIFIER
JESD-30 代码:R-PDSO-G8长度:4.902 mm
信道数量:1功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE座面最大高度:1.753 mm
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.899 mmBase Number Matches:1

CLC5509CM 数据手册

 浏览型号CLC5509CM的Datasheet PDF文件第2页浏览型号CLC5509CM的Datasheet PDF文件第3页浏览型号CLC5509CM的Datasheet PDF文件第4页浏览型号CLC5509CM的Datasheet PDF文件第5页浏览型号CLC5509CM的Datasheet PDF文件第6页浏览型号CLC5509CM的Datasheet PDF文件第7页 
January 2000  
CLC5509  
Ultra-Low Noise Preamplifier  
General Description  
Features  
@
total input noise 12MHz  
n 0.58nV  
The CLC5509 is a high performance, ultra-low noise pream-  
plifier designed for applications requiring unconditional sta-  
bility for wide ranges of complex input loads. Both input im-  
pedance and gain are externally adjustable, which make it  
simple to interface to peizoelectric ultrasound transducers.  
<
n
.5ns group delay repeatability  
@
n High cutoff −3dB 33MHz  
n Low cutoff −3dB 0.5MHz  
n 2.0dB noise figure 50  
n −60dBc intermod for 2VPP 5MHz  
n Supply current: 11mA  
@
@
The CLC5509 preamplifier’s low 0.58nV  
total input  
@
noise makes it ideal for noise sensitive front ends. The high  
repeatability in group delay over voltage and temperature  
translates into precision edge measurements for Doppler ap-  
plications.  
n Available in 8-pin SOIC  
Applications  
n Ultrasound preamp  
n Tape drive preamp  
n Disk drive preamp  
The IC consists of an emitter input, common base amplifier  
stage followed by a low distortion, closed loop buffer. Exter-  
nal negative feedback creates a well controlled input imped-  
ance to allow a near noiseless active input transmission line  
termination. The preamp is stable against changes in source  
impedance of 50 to 200over temperature and supply  
variations, with gains from 14dB to 26dB. The CLC5509  
preamp architecture is also well suited for use with  
magneto-resistive tape or disk drive heads. In these applica-  
tions the head bias current can be reused to bias the  
preamp. The part is packaged in an 8-pin plastic SOIC, and  
Group Delay Repeatability  
±
runs off 5V supplies. External biasing is required for the in-  
put signal path.  
The CLC5509 is constructed using an advanced comple-  
mentary bipolar process and National Semiconductor’s  
proven high performance architectures.  
DS101304-1  
Connection Diagram  
DS101304-3  
Pinout  
SOIC  
© 2000 National Semiconductor Corporation  
DS101304  
www.national.com  

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