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CDQ0303-QS_07 PDF预览

CDQ0303-QS_07

更新时间: 2024-02-02 09:06:21
品牌 Logo 应用领域
MIMIX 放大器
页数 文件大小 规格书
14页 532K
描述
500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier

CDQ0303-QS_07 数据手册

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500-6000 MHz  
Dual, Ultra Low Noise, High IP3 Amplifier  
October 2007 - Rev 22-Oct-07  
CDQ0303-QS  
Features  
Matched Pair of Transistors for Optimum  
Balanced Amplifier Design  
AlGaAs/InGaAs/AlGaAs Pseudomorphic High  
Electron Mobility Transistor (pHEMT)  
High Gain:  
25 dB @ 900 MHz  
21 dB @ 1900 MHz  
Low Noise Figure:  
0.6 dB @ 900 MHz  
0.7 dB @ 1900 MHz  
17 dBm P1dB at 2 GHz  
33 dBm OIP3 at 2 GHz  
600µm Gate Width: 50 Output Impedance  
Excellent Uniformity  
Ultra Compact Surface-Mount QFN Package  
Typical Specifications (50 System)  
10 Year MTBF Lifetime  
RoHS-Compliant Construction  
Parameter  
900 MHz 1900 MHz 2400 MHz  
Units  
dB  
S21 Gain  
23.5  
-3.0  
-3.5  
31.8  
16.5  
0.55  
50  
20.0  
-4.0  
-4.5  
32.5  
16.0  
0.72  
50  
16.0  
-3.0  
-7.0  
32.7  
16.0  
0.89  
50  
S11 Input Return Loss  
S22 Output Return Loss  
Output IP3  
dB  
dB  
Applications  
dBm  
dBm  
dB  
Low Noise Amplifiers and Oscillators Operating  
over the RF and Microwave Frequency Ranges  
Cellular/PCS/GSM/W-CDMA  
Mobile Handsets, Base Station Receivers and  
Tower-Mount Amplifiers  
WiMAX WLAN, LEO, GEO,WLL/RLL, GPS and  
MMDS Applications  
General Purpose Discrete pHEMT for Other Ultra  
Low-Noise and Medium Power Applications  
Output P1 dB  
Noise FIgure  
Operating Current Range  
Supply Voltage  
mA  
V
3.0  
3.0  
3.0  
Note:Typical specifications represents performance for each side of  
the matched pair of transistors in the recommended application circuit  
board (see page 15). It is anticipated that the pair will be used in a bal-  
anced circuit configuration, hence the matches are optimized for best  
noise figure and OIP3 performance.  
Description  
frequency range. It can also be used in a dual-band configu-  
ration where a single transistor is used for each band.  
Mimix's high performance packaged pHEMTs are  
The CDQ0303-QS is a dual, ultra low-noise amplifi-  
er combining high gain, state-of-the-art noise figure and high  
IP3. Utilizing Mimix's distinctive in-house GaAs fabrica-  
tion advantage and matched pair technology, co-located  
matched transistor die are assembled in the 4mm x 4mm  
QFN package. The low-cost, surface-mount, 16 terminal,  
plastic package is also lead-free.  
Packaging a matched pair of ultra low-noise devices  
in a single package makes the CDQ0303-QS an ideal product  
for balanced amplifier implementation. It is intended for  
many applications operating in the 900 MHz to 2400 MHz  
ideal for use in all applications where low-noise figure, high  
gain, medium power and good intercept is required. The  
CDQ0303-QS is the perfect solution for the first or second  
stage of a base station LNA due to the excellent combination  
of low-noise figure and linearity. It is also well suited as a  
medium power driver stage in pole-top amplifiers and other  
transmit functions, particularly as the low thermal resistance  
allows extended power dissipation when voltage and current  
are adjusted for increased power and linearity.  
Page 1 of 14  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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