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CD74HC7266M96G4 PDF预览

CD74HC7266M96G4

更新时间: 2024-01-28 20:05:35
品牌 Logo 应用领域
德州仪器 - TI
页数 文件大小 规格书
12页 409K
描述
High-Speed CMOS Logic Quad 2-Input EXCLUSIVE NOR Gate

CD74HC7266M96G4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP14,.25针数:14
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:6 weeks风险等级:5.27
系列:HC/UHJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
负载电容(CL):50 pF逻辑集成电路类型:XNOR GATE
最大I(ol):0.0052 A湿度敏感等级:1
功能数量:4输入次数:2
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
电源:2/6 V最大电源电流(ICC):0.04 mA
Prop。Delay @ Nom-Sup:35 ns传播延迟(tpd):150 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.75 mm子类别:Gates
最大供电电压 (Vsup):6 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):4.5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.91 mm
Base Number Matches:1

CD74HC7266M96G4 数据手册

 浏览型号CD74HC7266M96G4的Datasheet PDF文件第1页浏览型号CD74HC7266M96G4的Datasheet PDF文件第2页浏览型号CD74HC7266M96G4的Datasheet PDF文件第3页浏览型号CD74HC7266M96G4的Datasheet PDF文件第5页浏览型号CD74HC7266M96G4的Datasheet PDF文件第6页浏览型号CD74HC7266M96G4的Datasheet PDF文件第7页 
CD54HC7266, CD74HC7266  
DC Electrical Specifications (Continued)  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
V
CC  
PARAMETER  
Input Leakage  
SYMBOL  
V (V)  
I
(mA)  
O
(V)  
MIN  
TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
I
V
or  
-
6
-
-
±0.1  
-
±1  
-
±1  
µA  
I
CC  
Current  
GND  
Quiescent Device  
Current  
I
V
GND  
or  
0
6
-
-
2
-
20  
-
40  
µA  
CC  
CC  
Switching Specifications Input t , t = 6ns  
r
f
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
TEST  
PARAMETER  
HC TYPES  
SYMBOL  
CONDITIONS  
V
(V)  
TYP  
MAX  
MAX  
MAX  
UNITS  
CC  
Propagation Delay  
t
t
C = 50pF  
2
-
-
115  
23  
30  
-
145  
29  
25  
-
150  
35  
30  
-
ns  
ns  
ns  
ns  
PLH, PHL  
L
4.5  
6
5
-
Propagation Delay Time, Any  
Input  
t
t
C = 15pF  
9
PLH, PHL  
L
Output Transition Times  
(Figure 1)  
t
, t  
TLH THL  
C = 50pF  
L
2
-
-
75  
15  
13  
10  
-
95  
19  
16  
10  
-
110  
22  
19  
10  
-
ns  
ns  
ns  
pF  
pF  
4.5  
6
-
Input Capacitance  
C
-
-
-
IN  
Power Dissipation  
Capacitance  
C
C = 15pF  
5
33  
PD  
L
(Note 2)  
NOTE:  
2
2. C  
is used to determine the dynamic power consumption per gate, P = V  
f (C + C ) where f = Input Frequency, C = Output  
PD L i L  
PD  
Load Capacitance, V  
D
CC  
i
= Supply Voltage.  
CC  
Test Circuit and Waveform  
t = 6ns  
t = 6ns  
f
r
V
CC  
90%  
50%  
10%  
INPUT  
GND  
t
t
TLH  
THL  
90%  
50%  
10%  
INVERTING  
OUTPUT  
t
t
PLH  
PHL  
FIGURE 1. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC  
4

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