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CAT1021YI-30T2 PDF预览

CAT1021YI-30T2

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
CATALYST 监控可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
21页 278K
描述
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer

CAT1021YI-30T2 数据手册

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CAT1021, CAT1022, CAT1023  
RESET CIRCUIT AC CHARACTERISTICS  
Symbol  
tPURST  
tRDP  
Parameter  
Test Conditions  
Note 2  
Min  
Typ  
Max  
270  
5
Units  
ms  
µs  
Power-Up Reset Timeout  
VTH to RESET output Delay  
VCC Glitch Reject Pulse Width  
130  
200  
Note 3  
tGLITCH  
Note 4, 5  
Note 1  
30  
ns  
MR Glitch Manual Reset Glitch Immunity  
100  
ns  
tMRW  
tMRD  
tWD  
MR Pulse Width  
Note 1  
5
µs  
MR Input to RESET Output Delay  
Watchdog Timeout  
Note 1  
1
µs  
Note 1  
1.0  
1.6  
2.1  
sec  
POWER-UP TIMING (5), (6)  
Symbol  
tPUR  
Parameter  
Test Conditions  
Min  
Typ  
Max  
270  
270  
Units  
ms  
Power-Up to Read Operation  
Power-Up to Write Operation  
tPUW  
ms  
AC TEST CONDITIONS  
Parameter  
Test Conditions  
Input Pulse Voltages  
Input Rise and Fall times  
Input Reference Voltages  
Output Reference Voltages  
Output Load  
0.2VCC to 0.8VCC  
10ns  
0.3VCC , 0.7VCC  
0.5VCC  
Current Source: IOL = 3mA; CL = 100pF  
RELIABILITY CHARACTERISTICS  
Symbol Parameter  
Reference Test Method  
Min  
Max  
Units  
(5)  
NEND  
Endurance  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
1,000,000  
100  
Cycles/Byte  
Years  
(5)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-Up  
(5)  
VZAP  
2000  
Volts  
(5)(7)  
ILTH  
100  
mA  
Notes:  
(1) Test Conditions according to “AC Test Conditions” table.  
(2) Power-up, Input Reference Voltage VCC = VTH, Reset Output Reference Voltage and Load according to “AC Test Conditions” Table  
(3) Power-Down, Input Reference Voltage VCC = VTH, Reset Output Reference Voltage and Load according to “AC Test Conditions” Table  
(4) VCC Glitch Reference Voltage = VTHmin; Based on characterization data  
(5) This parameter is characterized initially and after a design or process change that affects the parameter. Not 100% tested.  
(6) tPUR and tPUW are the delays required from the time VCC is stable until the specified memory operation can be initiated.  
(7) Latch-up protection is provided for stresses up to 100mA on input and output pins from -1V to VCC + 1V.  
Doc. No. 3009 Rev. L  
6
© 2007 Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  

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