2N4352

更新时间： 2024-01-19 07:30:19

品牌	Logo	应用领域
CALOGIC		晶体开关放大器小信号场效应晶体管
页数	文件大小	规格书
1页	23K
描述
P-Channel Enhancement Mode MOSFET Amplifier/Switch

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技术参数
数据手册

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2N4352 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.75	Base Number Matches：	1

2N4352 数据手册

P-Channel Enhancement Mode

MOSFET Amplifier/Switch

CORPORATION

2N4352

FEATURES

ABSOLUTE MAXIMUM RATINGS

(T_A= 25^oC unless otherwise noted)

• Low ON Resistance

• Low Capacitance

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V

Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V

Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC

Operating Temperature Range . . . . . . . . . . . -55^oC to +150^oC

Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW

Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/^oC

• High Gain

• P-Channel Complement to 2N4341

PIN CONFIGURATION

NOTE: Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at these or

any other conditions above those indicated in the operational sections

of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TO-72

ORDERING INFORMATION

Part

Package

Temperature Range

-55^oC to +150^oC

1503

2N4352

Hermetic TO-72

X2N4352 Sorted Chips in Carriers

-55^oC to +150^oC

ELECTRICAL CHARACTERISTICS (T_A= 25^oC unless otherwise specified)

SYMBOL

PARAMETER

MIN

MAX

UNITS

TEST CONDITIONS

I_D= -10µA, V_GS= 0

V_(BR)DSX

Drain-Source Breakdown Voltage

-25

Vdc

-10

nAdc

µAdc

_DS= -10V, V_GS= 0, T_A= 25^oC

_DS= -10V, V_GS= 0, T_A= 150^oC

I_DSS

Zero-Gate-Voltage Drain Current

I_GSS

Gate Reverse Current

Gate Threshold Voltage

Drain-Source On-Voltage

On-State Drain Current

Drain-Source Resistance

Forward Transfer Admittance

Input Capacitance

±10

-5.0

-1.0

Vdc

V_GS= ±30V, V_DS= 0

V_GS(th)

V_DS(on)

I_D(on)

-1.0

-3.0

V_DS= -10V, I_D= -10µA

I_D= -2mA, V_GS= -10V

V_GS= -10V, V_DS= -10V

r_DS(on)

600

ohms

µmho

V_GS= -10V, I_D= 0, f = 1.0kHz

V_DS= -10V, I_D= 2.0mA, f = 1.0kHz

V_DS= -10V, V_GS= 0, f = 140MHz

V_DS= 0, V_GS= 0, f = 140MHz

V_D(sub)= -10V, f = 140kHz

| y_fs

C_iss

C_rss

1000

5.0

1.3

5.0

Reverse Transfer Capacitance

Drain-Substrate Capacitance

Turn-On Delay

C_d(sub)

t_d1

t_r

t_d2

t_f

Rise Time

I_D= -2.0mAdc, V_DS= -10Vdc

V_GS= -10V

Turn-Off Delay

Fall Time

100

CALOGIC CORPORATION, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-3025

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