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C67078-S5014-A3 PDF预览

C67078-S5014-A3

更新时间: 2024-02-15 12:20:51
品牌 Logo 应用领域
英飞凌 - INFINEON 传感器温度传感器
页数 文件大小 规格书
9页 323K
描述
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)

C67078-S5014-A3 数据手册

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TEMPFET  
BTS 112A  
Features  
N channel  
Enhancement mode  
Temperature sensor with thyristor characteristic  
The drain pin is electricalIy shorted to the tab  
3
2
1
Pin  
1
2
3
G
D
S
Type  
VDS  
ID  
RDS(on)  
Package  
TO-220AB  
Ordering Code  
BTS 112A  
60 V  
12 A  
0.15 Ω  
C67078-S5014-A3  
Maximum Ratings  
Parameter  
Symbol  
Values  
60  
Unit  
Drain-source voltage  
VDS  
VDGR  
VGS  
ID  
V
Drain-gate voltage, RGS = 20 kΩ  
Gate-source voltage  
60  
± 20  
12  
Continuous drain current, TC = 33 °C  
A
ISO drain current  
ID-ISO  
2.5  
TC = 85 °C, VGS = 10 V, VDS = 0.5 V  
Pulsed drain current,  
Short circuit current,  
TC = 25 °C  
Tj = – 55 ... + 150 °C  
ID puls  
ISC  
48  
27  
Short circuit dissipation, Tj = – 55 ... + 150 °C  
Power dissipation  
400  
40  
W
PSCmax  
Ptot  
Operating and storage temperature range  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
Tj, Tstg  
– 55 ... + 150  
E
°C  
55/150/56  
Thermal resistance  
Chip-case  
Chip-ambient  
K/W  
Rth JC  
Rth JA  
3.1  
75  
Semiconductor Group  
1
04.97  

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