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C40D PDF预览

C40D

更新时间: 2024-09-28 23:39:15
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描述
Mixed-Signal CMOS and specialized analog processes

C40D 数据手册

 浏览型号C40D的Datasheet PDF文件第2页 
4 Micron CMOS Process Family  
Features  
• Double Poly / Double Metal  
Process parameters  
• 8 µm Poly and Metal Pitch  
Process Parameters  
4mm  
4mm  
Units  
• 10 Volts Maximum Operating Voltage  
• 15 Volts High Voltage Option  
10 volts  
15 volts  
Metal I pitch (width/space)  
Metal II pitch (width/space)  
Poly pitch (width/space)  
Contact  
4 / 4  
3 / 4  
4 / 4  
4 x 4  
3 x 3  
4.0  
4 / 4  
3 / 4  
4 / 4  
4 x 4  
3 x 3  
4.0  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
mm  
• Isolated Vertical PNP Bipolar Module  
Description  
Dalsa Semiconductor’s 4µm process is a double poly/double  
metal CMOS process with an operating voltage range of 5 to 10  
volts. In addition, a high voltage option is also available in  
which a special drain structure allows the maximum operating  
voltage to be increased to 18 volts. No compromises are made  
with packing density since all high voltage gates are drawn at  
4µm. Also, an Isolated Vertical PNP bipolar module with good  
gain characteristics and high BVceo can be implemented on  
both options.  
Via  
Gate geometry  
P-well junction depth  
N+ junction depth  
P+ junction depth  
Gate oxide thickness  
Inter poly oxide thick.  
5.7  
7.0  
1.5  
1.4  
0.90  
640  
800  
0.95  
800  
Å
Å
625  
MOSFET Electrical parameters  
Electrical  
4 MICRON - 10 volts  
4 MICRON - 15 volts  
Parameters  
Units  
Conditions  
saturation  
N Channel P Channel  
N Channel  
typ.  
P Channel  
typ.  
min.  
0.4  
typ.  
max.  
0.9  
min.  
0.4  
typ.  
max.  
0.9  
min.  
0.6  
max.  
1.2  
min.  
0.8  
max.  
1.4  
Vt (50x4mm)  
Ids (50x4mm)  
0.7  
32  
0.7  
17  
0.9  
94  
1.1  
37  
V
µA/µm  
10V : Vds=Vgs= 3v  
15V : Vds=Vgs=7.5v  
Body factor  
Bvdss  
0.8  
0.4  
1.3  
27  
0.5  
22  
Öv  
15  
12  
>20  
15  
12  
>20  
20  
18  
20  
18  
V
10V : Ids=1µA  
15V : Ids=20nA  
Subthres. slope  
Field threshold  
L effective  
114  
34  
90  
25  
108  
24  
80  
22  
mV/dec.  
V
Vds=0.1v  
Ids = 14 µA  
1.6  
2.6  
1.9  
2.6  
µm  
L drawn = 4µm  
For More Information:  
DALSA Semiconductor Sales  
18 Boulevard de l’Aéroport  
Bromont, Québec, Canada  
J2L 1S7  
Tel :  
Fax  
(450) 534-2321 ext. 1448  
(800) 718-9701  
(450) 534-3201  
www.dalsasemi.com  
email: dalsasales@dalsasemi.com  

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