Datasheet > C106A

C106A

更新时间： 2024-01-05 21:15:39

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C106A 数据手册

C106 SERIES

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

(R_GK= 1kΩ, T_J= -40 to +110°C)

C106Q

C106Y

C106F

C106A

C106B

C106C

C106D

C106E

C106M

V_RRM, V_DRM

100

200

300

400

500

600

Volts

Forward current RMS (all conduction angles)

Average forward current (T_A= 30°C)

I_T(RMS)

I_T(AV)

Amps

2.55

Peak non-repetitive surge current

I_TSM

I²t

Amps

A²s

(1/2 cycle, 60Hz, T_J= -40 to +110°C)

Circuit fusing considerations

(t = 8.3ms)

1.65

Peak gate power

P_GM

P_G(AV)

I_GFM

V_GRM

T_J

0.5

Watts

Amps

Volts

°C

Average gate power

0.1

Forward peak gate current

Peak reverse gate voltage

Operating junction temperature range

Storage temperature range

Mounting torque⁽²⁾

0.2

-40 to +110

-40 to +150

T_stg

°C

In. lb.

Note 1: V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

Note 2: Torque rating applies with use of compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink

contact pad are common. Soldering temperature shall not exceed 200°C. For optimum results, an activated flux is recommended.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Symbol

R_ӨJC

Maximum

Unit

°C/W

Thermal resistance, junction to ambient

R_ӨJA

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Peak forward or reverse blocking current

(V_AK= rated V_DRMor V_RRM, R_GK= 1kΩ)

T_J= 25°C

I_DRM,I_RRM

µA

T_J= 110°C

100

Rev. 20130118

12 3

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C106A1	CENTRAL	获取价格	SCRs
C106A1	NJSEMI	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTORS
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C106A-1	NEC	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-202, PLA
C106A-1	NJSEMI	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTORS
C106A-11	MOTOROLA	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-225AA
C106A12	NJSEMI	获取价格	SILICON CONTROLLED RECTIFIER REVERSE BLOCKING TRIODE THYRISTORS
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C106A1LEADFREE	CENTRAL	获取价格	Silicon Controlled Rectifier, 4A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-202, TO-
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