BZX84C3V3ET3G

更新时间： 2024-02-06 19:16:02

品牌	Logo	应用领域
安森美 - ONSEMI		稳压器二极管齐纳二极管测试光电二极管
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BZX84C3V3ET3G 数据手册

BZX84C2V4ET1 Series

Zener Voltage Regulators

225 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

http://onsemi.com

Specification Features

Cathode

Anode

• 225 mW Rating on FR−4 or FR−5 Board

• Zener Breakdown Voltage Range − 2.4 V to 75 V

• Package Designed for Optimal Automated Board Assembly

• Small Package Size for High Density Applications

• ESD Rating of Class 3 (>16 kV) per Human Body Model

• Peak Power − 225 W (8 X 20 ms)

SOT−23

CASE 318

STYLE 8

• Pb−Free Package is Available

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

MARKING DIAGRAM

xxxM

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

xxx = Specific Device Code

= Date Code

MAXIMUM RATINGS

Rating

Symbol

Max

Unit

ORDERING INFORMATION

Peak Power Dissipation @ 20 ms (Note 1)

225

Watts

†

@ T ≤ 25°C

Device

Package

Shipping

Total Power Dissipation on FR−5 Board,

BZX84CxxxET1

SOT−23

3000/Tape & Reel

(Note 2) @ T = 25°C

225

1.8

mW/°C

BZX84CxxxET1G SOT−23

(Pb−Free)

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

BZX84CxxxET3

SOT−23 10,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Total Power Dissipation on Alumina

Substrate, (Note 3) @ T = 25°C

300

2.4

mW/°C

Derated above 25°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

°C

DEVICE MARKING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 2 of

this data sheet.

Junction and Storage

Temperature Range

T , T

−65 to

+150

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. Nonrepetitive current pulse per Figure 9.

2. FR−5 = 1.0 X 0.75 X 0.62 in.

3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

July, 2004 − Rev. 3

BZX84C2V4ET1/D

12 3 4 5 6

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与BZX84C3V3ET3G相关器件

型号	品牌	描述	获取价格	数据表
BZX84C3V3-G	VISHAY	Silicon planar Zener diodes	获取价格
BZX84C3V3GS08	VISHAY	3.3V, 0.35W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SOT-23, 3 PIN	获取价格
BZX84C3V3-GS08	VISHAY	Zener Diode, 3.3V V(Z), 5%, 0.35W,	获取价格
BZX84C3V3GS18	VISHAY	Zener Diode, 3.3V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC, SOT-23, 3 PIN	获取价格
BZX84C3V3-GS18	VISHAY	Zener Diode, 3.3V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC, SOT-23, 3 PIN	获取价格
BZX84C3V3-GT1	SENSITRON	Zener Diode, 3.3V V(Z), 5%, 0.35W, Silicon, Unidirectional, PLASTIC PACKAGE-3	获取价格

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