Datasheet > BZX84B51

BZX84B51

更新时间： 2024-01-24 12:42:45

品牌	Logo	应用领域
强茂 - PANJIT		稳压二极管测试光电二极管
页数	文件大小	规格书
4页	70K
描述
SURFACE MOUNT SILICON ZENER DIODES

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中文翻译

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技术参数
数据手册

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BZX84B51 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.79	Base Number Matches：	1

BZX84B51 数据手册

1. DATA SHEET

BZX84B SERIES

SURFACE MOUNT SILICON ZENER DIODES

Unit: inch (mm)

SOT- 23

410 mWatts

POWER

VOLTAGE

4.3 - 39 Volts

FEATURES

• Planar Die construction

.119(3.00)

.110(2.80)

• 410mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

• Pb free product are available : 99% Sn above can meet Rohs

environment substance directive request

.083(2.10)

.066(1.70)

.006(.15)

.002(.05)

MECHANICALDATA

• Case: SOT-23, Molded Plastic

• Terminals: Solderable per MIL-STD-202G, Method 208

• Polarity: See Diagram Below

.006(.15)MAX

.020(.50)

.013(.35)

• Approx. Weight: 0.008 grams

• Mounting Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Param eter

Sym bol

Value

Units

M axim um Forward Voltage D rop atIF=10m A

0.9

410

PowerD issipation (Notes A)at25^OC

m W

Am ps

^OC

Peak Forward Surge C urrent,8.3m s single half

sine-wave superim posed on rated load (JED EC m ethod) (Notes B)

IFSM

2.0

O perating Junction and StorageTem perature Range

-55 to +150

SINGLE

( Note C )

NOTES:

A. Mounted on 5.0mm²(.013mm thick) land areas.

B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.

C. For Structure Purpose only.

PAGE . 1

STAD-DEC.02.2004

12 3 4

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