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BZX84B3V9-E9 PDF预览

BZX84B3V9-E9

更新时间: 2024-01-19 10:15:35
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
10页 459K
描述
DIODE 3.9 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode

BZX84B3V9-E9 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.11Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:90 Ω
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:3.9 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40最大电压容差:2%
工作测试电流:5 mABase Number Matches:1

BZX84B3V9-E9 数据手册

 浏览型号BZX84B3V9-E9的Datasheet PDF文件第2页浏览型号BZX84B3V9-E9的Datasheet PDF文件第3页浏览型号BZX84B3V9-E9的Datasheet PDF文件第4页浏览型号BZX84B3V9-E9的Datasheet PDF文件第5页浏览型号BZX84B3V9-E9的Datasheet PDF文件第6页浏览型号BZX84B3V9-E9的Datasheet PDF文件第7页 
BZX84 Series  
Vishay Semiconductors  
VISHAY  
Zener Diodes  
Features  
• These diodes are also available in other case  
styles and other configurations including: the  
SOD-123 case with type designation BZT52  
series, the dual zener diode common anode con-  
figuration in the SOT-23 case with type designa-  
tion AZ23  
series and the dual zener diode common cathode  
configuration in the SOT-23 case with type desig-  
nation DZ23 series.  
Mechanical Data  
Case: SOT-23 Plastic Package  
Weight: Approx. 8 mg  
Packaging Codes/Options:  
E8 / 10k per 13 " reel (8 mm tape), 30k/box  
E9 / 3k per 7 " reel (8 mm tape), 30k/box  
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener volt-  
age tolerance is 5 %. Replace "C" with "B" for  
2 % tolerance. Other voltage tolerances and  
other Zener voltages are available upon request.  
• Silicon Planar Power Zener Diodes  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
1)  
Power dissipation  
P
tot  
300  
1)  
Device on fiberglass substrate, see layout.  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to ambient air  
Junction temperature  
R
°C/W  
°C  
θJA  
420  
T
150  
j
Storage temperature range  
T
- 65 to + 150  
°C  
S
1)  
Device on fiberglass substrate, see layout.  
Document Number 85763  
Rev. 2, 15-Jul-03  
www.vishay.com  
1

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