BZX79-C68

更新时间： 2024-10-01 00:01:27

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管测试局域网
页数	文件大小	规格书
8页	331K
描述
SILICON PLANAR ZENER DIODES

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中文翻译

获取价格

技术参数
数据手册

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BZX79-C68 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
Is Samacsys：	N	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	240 Ω
JESD-609代码：	e2	元件数量：	1
最高工作温度：	200 °C	最大功率耗散：	0.5 W
标称参考电压：	68 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	端子面层：	Tin/Silver (Sn/Ag)
最大电压容差：	5%	工作测试电流：	2 mA
Base Number Matches：	1

BZX79-C68 数据手册

BZX79 SERIES

SILICON PLANAR ZENER DIODES

DO-35

FEATURES

The Zener voltages are graded according to the international

E 24 standard. Higher Zener voltages and 1% tolerance

available on request.

max.

.079 (2.0)

Diodes available in these tolerance series:

Cathode

Mark

±2% BZX79-B

±3% BZX79-F

±5% BZX79-C

max. .020 (0.52)

MECHANICAL DATA

Case: DO-35 Glass Case

Weight: approx. 0.13 g

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature 8unless otherwise specified

SYMBOL

VALUE

UNIT

Zener Current (see Table “Characteristics”)

Power Dissipation at T_amb= 25°C

Junction Temperature

P_tot

T_j

500⁽¹⁾

-65 to 200

-65 to + 200

250

°C

Storage Temperature Range

Continuous Forward Current

T_S

I_F

°C

Peak reverse power dissipation (non-repetitive) t_p=100ms,

square wave

P_ZSM

Watts

Characteristics at Tamb = 25°C

SYMBOL

MIN.

TYP.

MAX.

UNIT

Thermal Resistance

Junction to Ambient Air

R_thJA

–

0.3⁽¹⁾

0.9

°C/W

Forward Voltage

at I_F= 10 mA

V_F

–

Volts

NOTES:

(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.

12/10/98

12 3 4 5 6 7 8

中文翻译

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