Datasheet > BZX55A9V1

BZX55A9V1

更新时间： 2024-02-19 07:58:12

品牌	Logo	应用领域
SS		/
页数	文件大小	规格书
3页	371K
描述
0.5W Zener Diode

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中文翻译

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技术参数
数据手册

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BZX55A9V1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.62
Is Samacsys：	N	配置：	SINGLE
二极管类型：	ZENER DIODE	最大动态阻抗：	10 Ω
JESD-609代码：	e0	元件数量：	1
最高工作温度：	175 °C	最大功率耗散：	0.5 W
标称参考电压：	9.1 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
最大电压容差：	1%	工作测试电流：	5 mA
Base Number Matches：	1

BZX55A9V1 数据手册

0.5W Zener Diode - BZX55A* series

Rev 1.0

0.5W 5mA I_ZTSilicon Planar Zener diode in bare die form – 1% tolerance, “A” grade

07/04/19

Features:

Die Dimensions in µm (mils)

Tight tolerance reverse breakdown voltage

330 (12.99)

210 (8.27)

I_Rcharacterized at 125°C

Sharp reverse characteristics

Low reverse current Levels

High reliability gold back metal

Ordering Information

ANODE

The following part suffixes apply:

No suffix - MIL-STD-750 /2073 Visual Inspection

“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT

“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

CHIP BACKSIDE IS CATHODE

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

Supply Formats:

Mechanical Specification

Die Size (Unsawn)

Anode Pad Size

Die Thickness

330 x 330

12.99 x 12.99

µm

mils

Default – Die in Waffle Pack (400 per tray capacity)

Sawn Wafer on Tape – By specific request

Unsawn Wafer – By specific request

Lower precision V_Ztolerances:

210 x 210

8.27 x 8.27

µm

mils

200

7.87

µm

mils

Top Metal Composition

Back Metal Composition

2% - B grade, 5% - C grade

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