BZX55 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics (TA = 25°C unless otherwise noted) Maximum V = 1.0 V at I = 100 mA
F
F
Dynamic resistance
Temp. coefficient of Zener
Reverse leakage current
at
at
Admissible
Zener
Voltage at I = 5 mA
Z
at I = 5 mA at I = 1mA
Type
y = C for 5%
y = B for 2%
at
(V)
Z
Z
T
= 25°C
current(2)
αvz (%/°C)
f = 1 kHz
rzj (Ω)
f = 1 kHz
rzj (Ω)
amb
T
amb
= 150°C
V
R
I
R
(µA)
min
I
(nA)
I (mA)
ZM
max
R
BZX55 – y0V8(3)
BZX55 – y2V4
BZX55 – y2V7
BZX55 – y3V0
BZX55 – y3V3
BZX55 – y3V6
BZX55 – y3V9
BZX55 – y4V3
BZX55 – y4V7
BZX55 – y5V1
BZX55 – y5V6
BZX55 – y6V2
BZX55 – y6V8
BZX55 – y7V5
BZX55 – y8V2
BZX55 – y9V1
BZX55 – y10
BZX55 – y11
BZX55 – y12
BZX55 – y13
BZX55 – y15
BZX55 – y16
BZX55 – y18
BZX55 – y20
BZX55 – y22
BZX55 – y24
BZX55 – y27
BZX55 – y30
BZX55 – y33
BZX55 – y36
BZX55 – y39
BZX55 – y43
BZX55 – y47
BZX55 – y51
BZX55 – y56
BZX55 – y62
BZX55 – y68
BZX55 – y75
BZX55 - y82
BZX55 - y91
BZX55 - y100
< 8
< 85
< 600
< 600
– 0.25
– 0.08
– 0.08
– 0.08
– 0.08
– 0.08
– 0.07
– 0.04
– 0.03
– 0.02
– 0.01
0
–
–
–
–
1
–
– 0.06
– 0.06
– 0.06
– 0.05
– 0.04
– 0.03
– 0.01
+0.01
+0.05
+0.06
+0.07
+0.08
+0.09
+0.09
+0.10
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.11
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
+0.12
< 50000
< 10000
< 4000
< 2000
< 2000
< 2000
< 1000
< 500
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 2
145
135
125
115
105
95
< 85
< 600
1
< 85
< 600
1
< 85
< 600
1
< 85
< 600
1
< 85
< 600
1
< 75
< 600
1
90
< 60
< 600
1
85
< 35
< 550
1
80
< 25
< 450
< 2
1
70
< 10
< 200
< 2
2
64
< 8
< 150
+0.01
+0.01
+0.01
+0.02
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.03
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
+0.04
< 2
3
58
< 7
< 50
< 2
5
53
< 7
< 50
< 2
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
47
< 10
< 50
< 2
43
< 15
< 70
< 2
40
< 20
< 70
< 2
36
< 20
< 90
< 2
32
< 26
< 110
< 2
29
< 30
< 110
< 2
27
< 40
< 170
< 2
24
< 50
< 170
< 2
21
< 55
< 220
< 2
20
< 55
< 220
< 2
18
< 80
< 220
< 2
16
< 80
< 220
< 2
14
< 80
< 220
< 2
13
< 80
< 220
< 2
12
< 80
< 220
< 2
11
< 90(4)
< 90(4)
< 110(4)
< 125(4)
< 135(4)
< 150(4)
< 200(4)
< 250(4)
< 300(4)
< 450(6)
< 450(6)
< 500(5)
< 600(5)
< 700(5)
< 700(5)
< 1000(5)
< 1000(5)
< 1000(5)
< 1500(5)
< 2000(5)
< 5000(7)
< 5000(7)
< 5
10
< 5
9.2
8.5
7.8
7.0
6.4
5.9
5.3
4.8
4.4
4.0
< 5
< 10
< 10
< 10
< 10
< 10
< 10
< 10
< 10
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
typ. +0.1(4)
Notes: (1) Tested with pulses tp = 5 ms
(2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case
(3) The BZX55–C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be “F” instead of “Z”.
Connect the cathode lead to the negative pole.
(4) at IZ = 2.5 mA
(6) at Iz = 1.0 mA
(5) at IZ = 0.5 mA
(7) at Iz = 0.1 mA
www.vishay.com
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Document Number 88319
26-Apr-02