5秒后页面跳转
BZW04P53 PDF预览

BZW04P53

更新时间: 2024-01-11 01:56:09
品牌 Logo 应用领域
EIC 瞬态抑制器二极管
页数 文件大小 规格书
4页 53K
描述
TRANSIENT VOLTAGE SUPPRESSOR

BZW04P53 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:N最大击穿电压:68.2 V
最小击穿电压:58.9 V外壳连接:ISOLATED
最大钳位电压:85 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
极性:BIDIRECTIONAL最大功率耗散:1 W
认证状态:Not Qualified最大反向电流:5 µA
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

BZW04P53 数据手册

 浏览型号BZW04P53的Datasheet PDF文件第2页浏览型号BZW04P53的Datasheet PDF文件第3页浏览型号BZW04P53的Datasheet PDF文件第4页 
TRANSIENT VOLTAGE  
SUPPRESSOR  
BZW04 SERIES  
VBR : 6.8 - 440 Volts  
PPK : 400 Watts  
DO - 41  
1.00 (25.4)  
FEATURES :  
0.107 (2.74)  
MIN.  
* 400W surge capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
* Fast response time : typically less  
then 1.0 ps from 0 volt to VBR(min)  
* Typical IR less then 1mA above 10V  
0.080 (2.03)  
0.205 (5.20)  
0.160 (4.10)  
1.00 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
Dimensions in inches and (millimeters)  
* Polarity : Color band denotes cathode end except Bipolar.  
* Mounting position : Any  
* Weight : 0.339 gram  
DEVICES FOR BIPOLAR APPLICATIONS  
For bi-directional use B Suffix.  
Electrical characteristics apply in both directions  
MAXIMUM RATINGS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation at Ta = 25 °C, Tp=1ms (Note1)  
Steady State Power Dissipation at TL = 75 °C  
Lead Lengths 0.375", (9.5mm) (Note 2)  
PPK  
Minimum 400  
Watts  
PD  
1.0  
Watt  
Peak Forward Surge Current, 8.3ms Single Half  
Sine-Wave Superimposed on Rated Load  
(JEDEC Method) (Note 3)  
IFSM  
40  
Amps.  
Operating and Storage Temperature Range  
TJ, TSTG  
- 65 to + 175  
°C  
Note :  
(1 ) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25 °C per Fig. 1  
(2) Mounted on Copper Leaf area of 1.57 in2 (40mm2).  
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.  
UPDATE : MAY 18, 1998  

与BZW04P53相关器件

型号 品牌 获取价格 描述 数据表
BZW04P53/100 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/4E VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/4F VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/4G VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/4H VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 53V V(RWM), Unidirectional,
BZW04P53/53 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/54 VISHAY

获取价格

Trans Voltage Suppressor Diode, 53V V(RWM), Unidirectional,
BZW04P53/56 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
BZW04P53/58 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 53V V(RWM), Unidirectional, 1 Element, Silicon, DO-2