Datasheet > BZV55-C18

BZV55-C18

更新时间： 2024-02-18 04:54:37

品牌	Logo	应用领域
TYSEMI		二极管齐纳二极管
页数	文件大小	规格书
7页	326K
描述
Silicon Planar Power Zener Diodes

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技术参数
数据手册

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BZV55-C18 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1	类别：	Diodes
配置：	Single	容差：	0.05
VZ (V) nom.：	18	Condition1_IT (mA)：	5
PD (mW) max：	500	AEC Qualified：	Yes
最高工作温度：	175	最低工作温度：	-55
生命周期：	Active	是否无铅：	Yes
符合Reach：	Yes	符合RoHS：	Yes
ECCN代码：	EAR99	Pin：	Z1
Package Outlines：	MINI-MELF

BZV55-C18 数据手册

SMD Type

Product specification

Voltage regulator diodes

BZV55 series

FEATURES

• Total power dissipation: max. 500 mW

• Two tolerance series: ±2%, and approx. ±5%

• Working voltage range: nom. 2.4 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation:

max. 40 W.

columns

APPLICATIONS

MAM215

• Low voltage stabilizers or voltage references.

DESCRIPTION

Low-power voltage regulator diodes in small hermetically

sealed glass SOD80C SMD packages. The diodes are

available in the normalized E24 ±2% (BZV55-B) and

approx. ±5% (BZV55-C) tolerance range. The series

consists of 37 types with nominal working voltages from

2.4 to 75 V.

The cathode is indicated by a yellow band.

Fig.1 Simplified outline (SOD80C) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

250

see Tables 1 and 2 A

UNIT

I_F

continuous forward current

−

I_ZSM

non-repetitive peak reverse current

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge

P_tot

total power dissipation

_amb≤ 50 °C; note 1

−

400

500

tie-point ≤ 50 °C; note 1

P_ZSM

non-repetitive peak reverse power

dissipation

t_p= 100 µs; square wave;

T_j= 25 °C prior to surge; see Fig.3

T_stg

T_j

storage temperature

junction temperature

−65

+200

°C

Note

1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

2 of 7

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

123 4 5 6 7

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