Datasheet > BZV55C18BSB-W

BZV55C18BSB-W

更新时间： 2024-11-07 19:19:11

品牌	Logo	应用领域
RECTRON		二极管
页数	文件大小	规格书
6页	63K
描述
Zener Diode,

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中文翻译

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技术参数
数据手册

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BZV55C18BSB-W 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.67
二极管类型：	ZENER DIODE	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	MATTE TIN OVER NICKEL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

BZV55C18BSB-W 数据手册

BZV55C-BS

SERIES

4.7V to 36V

SILICON PLANAR ZENER DIODE

FEATURES

Zener Voltage Range 4.7 to 36 Volts

LL-34 (Mini-MELF) Package

Hermetically Sealed, Glass Silicon Diodes

SOD-80C

.059(1.50)

.056(1.42)

R.004(0.10)

.112(0.30)

.146(3.70)

.130(3.30)

.057(1.45)

.053(1.35)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

MAXIMUM RATINGES ( @ TA = 25^oC unless otherwise noted )

RATINGS

SYMBOL

VALUE

250

UNITS

Average Forward Current (averaged Over any 20 ms period)

Repetitive Peak Forward Current

F(av)

250

FRM

=50^OC

500

Total Power Dissipation up to T

flange

tot

Up to Ta=50 C and Mounted on a Ceramic Substrate of 10mm x 10

400

tot

mm x 0.6mm

Non-Reperitive Peak Reverse Power Dissipation t=100us,T =150^OC

ZSM

-65 to +200

^OC

Storage Temperature

stg

^OC

Junction Temperature

200

THERMAL RESISTANCE

0.30

0.38

Rth(j-tp)

Rth(j-a)

K/mW

From Junction to tie-point(flanges)

Form Junction to Ambient when Mounted on a Ceramic Substrate of

10mm x 10mm x 0.6mm

VD 2007-11

12 3 4 5 6

中文翻译

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