Datasheet > BZT52B22-E3-08

BZT52B22-E3-08

更新时间： 2024-01-01 01:03:10

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	138K
描述
DIODE ZENER 22V 410MW SOD123

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BZT52B22-E3-08 数据手册

BZT52-Series

Vishay Semiconductors

www.vishay.com

TYPICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

10³

100

T_J= 25 °C

10²

I_F

r_zj

T_J= 100 °C

10^-1

10^-2

T_J= 25 °C

10^-3

10^-4

10^-5

6.8/8.2

6.2

0.2

0.4

0.6

0.8

0.1

18119

I_Z

5 100 mA

V_F

18114

Fig. 1 - Forward characteristics

Fig. 4 - Dynamic Resistance vs. Zener Current

10³

500

400

300

200

100

T_j= 25 °C

R_zj

47 + 51

P_tot

10²

0.1

100

T_amb

200 °C

18120

I_Z

18888

Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 5 - Dynamic Resistance vs. Zener Current

1000

10³

ΔV_Z

T_J= 25 °C

R_zth= R_thAx V_Z

T_j

R_zth

r_zj

10²

100

2.7

3.6

4.7

5.1

negative

positive

5.6

0.1

18117

5 100 mA

100 V

I_Z

18121

V_Zat I_Z= 5 mA

Fig. 3 - Dynamic Resistance vs. Zener Current

Fig. 6 - Thermal Differential Resistance vs. Zener Voltage

Rev. 1.9, 20-Feb-18

Document Number: 85760

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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