Datasheet > BZT52B16-E3-08

BZT52B16-E3-08

更新时间： 2024-02-14 01:43:21

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	138K
描述
DIODE ZENER 500MW SOD-123

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BZT52B16-E3-08 数据手册

BZT52-Series

Vishay Semiconductors

www.vishay.com

V = r_zthx I_Z

T = 25 °C

3.9

5.6

2.7

6.8

3.3 4.7

8.2

l_Z

ΔV_Z

I_Z= 5 mA

Test

current

I_Z5 mA

I_Z= 2.5 mA

100 V

10 V

18160

V_Zat I_Z= 5 mA

18111

Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of

Thermal Equilibrium vs. Zener Voltage

Fig. 14 - Breakdown Characteristics

T = 25 °C

Test

current

5 mA

40 V

18112

Fig. 15 - Breakdown Characteristics

18157

Fig. 16 - Breakdown Characteristics

Rev. 1.9, 20-Feb-18

Document Number: 85760

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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