Datasheet > BZT52-C3V6

BZT52-C3V6

更新时间： 2024-01-29 13:47:34

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
8页	391K
描述
ZENER DIODES

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技术参数
数据手册

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BZT52-C3V6 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	1.55	Samacsys Confidence：	4
Samacsys Status：	Released	Schematic Symbol：	https://componentsearchengine.com/symbol.php?partID=1905324
PCB Footprint：	https://componentsearchengine.com/footprint.php?partID=1905324	Samacsys PartID：	1905324
Samacsys Image：	https://componentsearchengine.com/Images/9/BZT52-C3V6J.jpg	Samacsys Thumbnail Image：	https://componentsearchengine.com/Thumbnails/1/BZT52-C3V6J.jpg
Samacsys Pin Count：	2	Samacsys Part Category：	Zener Diode
Samacsys Package Category：	Other	Samacsys Footprint Name：	SOD123
Samacsys Released Date：	2019-04-13 12:58:00	Is Samacsys：	N
二极管类型：	ZENER DIODE	Base Number Matches：	1

BZT52-C3V6 数据手册

BZT52-C2V4 THRU BZT52-C75

ZENER DIODES

FEATURES

♦ Silicon Planar Power Zener Diodes

SOD-123

♦ The Zener voltages are graded according to the international

E 24 standard. Standard Zener voltage tolerance

is ±5%. Replace suffix “C” with “B” for ±2% toler-

ance. Other tolerances and other Zener voltages

are available upon request.

.022 (0.55)

Cathode Mark

Top View

♦ These diodes are also available in other case styles and other

configurations including: the SOT-23 case with type designation

BZX84 series, the dual zener diode common anode configuration

in the SOT-23 case with type designation AZ23 series and the

dual zener diode common cathode configuration in the SOT-23

case with type designation DZ23 series.

.067 (1.70)

.055 (1.40)

min. .010 (0.25)

MECHANICAL DATA

Case: SOD-123 Plastic Case

Dimensions are in inches and (millimeters)

Weight: approx. 0.01 g

MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNIT

Zener Current (see Table “Characteristics”)

Power Dissipation at Tamb = 25°C

Junction Temperature

P_tot

T_j

410⁽¹⁾

150

°C

Storage Temperature Range

T_S

– 65 to +150

°C

SYMBOL

MIN.

TYP.

MAX.

UNIT

Thermal Resistance

Junction to Ambient Air

R_ΘJA

–

300⁽²⁾

°C/W

NOTES:

(1) Diode on Ceramic Substrate 0.7mm; 2.5mm²area

(2) Valid provided that electrodes are kept at ambient temperature

12/10/98

12 3 4 5 6 7 8

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