BZM55C13

更新时间： 2024-01-15 03:03:25

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	84K
描述
Silicon Epitaxial Planar Z-Diodes

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BZM55C13 数据手册

BZM55C...

Vishay Telefunken

Characteristics (T_j= 25 C unless otherwise specified)

600

500

400

300

200

100

1.3

1.2

1.1

=V /V (25°C)

Zt Z

Ztn

–4

TK =10 10 /K

–4

10 /K

–4

10 /K

–4

10 /K

–4

10 /K

1.0

0.9

0.8

–4

–2 10 /K

–4

–4 10 /K

200

240

120

160

–60

120

180

95 9602

amb

– Ambient Temperature ( °C )

95 9599

T – Junction Temperature ( °C )

Figure 3. Typical Change of Working Voltage vs.

Junction Temperature

Figure 1. Total Power Dissipation vs.

Ambient Temperature

1000

100

T =25°C

I =5mA

–5

95 9600

V – Z-Voltage ( V )

95 9598

V – Z-Voltage ( V )

Figure 4. Temperature Coefficient of Vz vs. Z–Voltage

Figure 2. Typical Change of Working Voltage

under Operating Conditions at T =25 C

amb

200

150

V =2V

T =25°C

100

V – Z-Voltage ( V )

95 9601

Figure 5. Diode Capacitance vs. Z–Voltage

www.vishay.de • FaxBack +1-408-970-5600

Document Number 85598

Rev. 3, 01-Apr-99

3 (6)

1 234 5 6

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