BZM55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
Saving space
Hermetic sealed parts
Fits onto SOD 323 / SOT 23 footprints
Electrical data identical with the devices
BZT55C... / TZMC...
Very sharp reverse characteristic
Low reverse current level
Very high stability
96 12315
Low noise
Available with tighter tolerances
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
300K/W
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
R
thJA
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Test Conditions
Symbol Value Unit
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1
Junction tie point 35 m copper clad, 0.9 mm copper area per electrode
R
R
thJL
500
300
K/W
K/W
thJA
2
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85598
Rev. 3, 01-Apr-99
1 (6)