BZG04-120TR

更新时间： 2024-01-22 13:25:54

品牌	Logo	应用领域
威世 - VISHAY		瞬态抑制器二极管齐纳二极管
页数	文件大小	规格书
6页	184K
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中文翻译

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数据手册

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BZG04-120TR 数据手册

BZG04-Series

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features

• Glass passivated junction

• High reliability

• Stand-off Voltage range 8.2 V to 220 V

• Excellent clamping cabability

• Fast response time (typ. ≤ 1 ps from 0 to V

• Lead (Pb)-free component

)

Zmin

15811

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

Protection from high voltage, high energy transients

Mechanical Data

Case: DO-214AC

Weight: approx. 77 mg

Packaging Codes/Options:

TR / 1.5 k 7 " reel

TR3 / 6 k 13 " reel 6 k/box

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Power dissipation

Test condition

Symbol

P_diss

Value

Unit

R_thJA< 25 K/W, T_amb= 100 °C

_thJA< 100 K/W, T_amb= 50 °C

P_diss

1.25

300

Non repetitive peak surge power t_p= 10/1000 µs sq.pulse,

P_ZSM

dissipation

T_j= 25 °C prior to surge

Peak forward surge current

Junction temperature

10 ms single half sine wave

I_FSM

T_j

150

°C

Storage temperature range

T_stg

- 65 to + 150

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

R_thJL

Value

Unit

Junction lead

K/W

Junction ambient

mounted on epoxy-glass hard

tissue, Fig. 1a

R_thJA

150

125

100

mounted on epoxy-glass hard

tissue, Fig. 1b

K/W

mounted on Al-oxid-ceramic

(Al₂O₃), Fig. 1b

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

I_F= 0.5 A

Symbol

V_F

Min

Typ.

Max

1.2

Unit

Forward voltage

Document Number 85594

Rev. 2.2, 15-Sep-05

www.vishay.com

12 3 4 5 6

中文翻译

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