Datasheet > BZD27C6V2P-GS08

BZD27C6V2P-GS08

更新时间： 2022-12-01 22:02:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	84K
描述
DIODE 6.2 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-219AB, ROHS COMPLIANT, SMF, 2 PIN, Voltage Regulator Diode

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BZD27C6V2P-GS08 数据手册

BZD27C3V6P to BZD27C200P

Vishay Semiconductors

Typical Characteristics

= 25 °C, unless otherwise specified

amb

160

140

120

100

Max. V_F

Typ. V_F

0.1

0.6

0.8

1.0

1.2

1.4

1.6

100

150

200

17411

17414

V_F- Forward Voltage (V)

V_Znom- Zener Voltage (V)

Figure 1. Forward Current vs. Forward Voltage

Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage

10 000

I_RSM

(%)

t₁= 10 µs

t₂= 1000 µs

C5V1P

C18P

C6V8P

C12P

100

1000

100

C27P

C51P

C200P

0.5

t₁

1.0

1.5

2.0

2.5

3.0

t₂

17415

17412

V_R- Reverse Voltage (V)

Figure 2. Typ. Diode Capacitance vs. Reverse Voltage

Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition

3.0

Tie point temperature

2.5

2.0

1.5

1.0

0.5

Ambient temperature

T_amb- Ambient Temperature (°C)

Figure 3. Power Dissipation vs. Ambient Temperature

100 125 150

17413

www.vishay.com

Document Number 85810

Rev. 2.0, 23-Mar-10

For technical support, please contact: DiodesSSP@vishay.com

1 2 345 6 7

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