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BZD27C5V1 PDF预览

BZD27C5V1

更新时间: 2024-02-21 22:01:53
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
9页 44K
描述
DIODE 5.1 V, 0.8 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

BZD27C5V1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.71
JESD-609代码:e3峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BZD27C5V1 数据手册

 浏览型号BZD27C5V1的Datasheet PDF文件第3页浏览型号BZD27C5V1的Datasheet PDF文件第4页浏览型号BZD27C5V1的Datasheet PDF文件第5页浏览型号BZD27C5V1的Datasheet PDF文件第6页浏览型号BZD27C5V1的Datasheet PDF文件第8页浏览型号BZD27C5V1的Datasheet PDF文件第9页 
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
BZD27 series  
GRAPHICAL DATA  
MBH454  
MBH455  
3
3
handbook, halfpage  
handbook, halfpage  
P
P
tot  
tot  
(W)  
(W)  
2
2
1
0
1
0
0
0
100  
200  
100  
200  
T (°C)  
T (°C)  
Types BZD27-C3V6 to -C6V8  
Types BZD27-C7V5 to -C510  
Solid line: tie-point temperature.  
Solid line: tie-point temperature.  
Dotted line: ambient temperature;  
device mounted as shown in Fig.7.  
Dotted line: ambient temperature;  
device mounted as shown in Fig.7.  
Fig.2 Maximum total power dissipation as a  
function of temperature.  
Fig.3 Maximum total power dissipation as a  
function of temperature.  
MGD524  
MGD525  
4
10  
400  
handbook, halfpage  
handbook, halfpage  
P
ZSM  
(W)  
P
ZSM  
(W)  
300  
3
2
10  
200  
100  
0
10  
10  
10  
2  
1  
10  
1
10  
0
3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8  
(V)  
t
(ms)  
p
V
Znom  
Tj = 25 °C prior to surge.  
Tj = 25 °C prior to surge.  
See also Fig 5.  
Fig.4 Maximum non-repetitive peak reverse  
power dissipation as a function of pulse  
duration (square pulse).  
Fig.5 Maximum non-repetitive peak reverse  
power dissipation as a function of nominal  
working voltage.  
1996 Jun 10  
7

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